Highly Reliable Liquid-Phase-Deposited SiO<sub>2</sub>with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors

Yeh, Ching-Fa; Chen, Darren Chi-Hsiang; Lu, Chengyu; Liu, Chung; Lee, Su-Tseng; Liu, Cheng‐Hong; Chen, Tai-Ju

doi:10.1143/jjap.41.6119

Cited by 2 publications

(1 citation statement)

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“…Thus, there are many technologies that have been developed for improving SiO x films. [2][3][4] Recently, Yeh et al 5) have reported that N 2 O plasma post-treatment can improve liquid-phase-deposited SiO x (LPD-SiO x ) films. In their research studies, N 2 O plasma can relieve interfacial stress and form strong silicon-nitrogen (Si-N) bonds near the interface between Si and LPD-SiO x .…”

Section: Introductionmentioning

confidence: 99%

Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide

Lin¹,

Chen²,

Lee³

et al. 2007

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A new plasma treatment method was proposed to improve silicon oxide films. The improvement of the films was attributed to the introduction of oxygen atoms, which were extracted from self-biased nitrous oxide plasma. The introduced oxygen atoms decreased the number of defect sites in the silicon oxide film by forming new silicon-oxygen bonds. After the proposed nitrous oxide plasma treatment, the nonstoichiometric silicon oxide film showed good quality similarly to the silicon dioxide film. However, when the self-bias was very high, extra nitrogen atoms were generated from the nitrous oxide plasma and were incorporated into the silicon oxide film. This generated many defect sites degrading the quality of the silicon oxide film.

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Section: Introductionmentioning

confidence: 99%

Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide

Lin¹,

Chen²,

Lee³

et al. 2007

jjap

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Magnesium β-ketoiminates as CVD precursors for MgO formation

et al. 2018

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The synthesis and characterization of bis (ketoiminato) Complexes 3a-c were used as MOCVD precursors for the deposition of thin MgO films on silicon substrates. It was found that only with 3a,c thin, dense and rather granulated MgO layers of thicknesses between 28-147 nm were produced. The as-deposited MgO layers were characterized by SEM, EDX, and XPS measurements and the thicknesses of the as-deposited layers were measured by Ellipsometry and SEM cross-section images. Apart from magnesium and oxygen a carbon content between 3-4 mol% was determined.

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Highly Reliable Liquid-Phase-Deposited SiO₂with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors

Cited by 2 publications

References 1 publication

Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide

Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide

Magnesium β-ketoiminates as CVD precursors for MgO formation

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Highly Reliable Liquid-Phase-Deposited SiO2with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors

Cited by 2 publications

References 1 publication

Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide

Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide

Magnesium β-ketoiminates as CVD precursors for MgO formation

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Product

Resources

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Highly Reliable Liquid-Phase-Deposited SiO₂with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors