Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

Blum, O.; Fritz, I. J.; Dawson, L. R.; Howard, A. J.; Headley, T. J.; Klem, J.F.; Drummond, T. J.

doi:10.1063/1.114202

Cited by 43 publications

(16 citation statements)

References 11 publications

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“…The asymmetry which can be seen in the reflectivity spectrum of the (Al)GaInAs digital alloy Bragg mirror is due to a thicker AlGaInAs top layer of 175 nm. This significant asymmetry exhibited by the experimental reflectivity is typical of growth errors in the thickness of layers closest to the air interface [10]. Theoretical calculations are being developed to model the reflection spectrum and to study the effect of absorption on the reflectivity of this sample.…”

Section: Methodsmentioning

confidence: 99%

Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Dias

Duarte

Laureto

et al. 2000

Superlattices and Microstructures

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Section: Methodsmentioning

confidence: 99%

Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Dias

Duarte

Laureto

et al. 2000

Superlattices and Microstructures

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“…Details of reflectivity modeling and optical constants used are described elsewhere. 7 In order to obtain the best fit, we used 1474 Å for AlAsSb layers and 1234 Å for GaAsSb layers, except for the GaAsSb layer closest to the surface, which was 1184 Å. These values are very close to the nominal thicknesses of 1453 and 1200 Å, respectively.…”

Section: Atandt Bell Laboratories Murray Hill New Jersey 07974mentioning

confidence: 99%

“…Recently, several groups have demonstrated highly reflective DBRs incorporating various antimonide compounds including: AlPSb/GaPSb on InP, 6 GaAsSb/AlAsSb on InP, 7 and AlGaAsSb/AlAsSb on InP. 8,9 All these structures were undoped, however, whereas an electrically injected VCSEL usually employs at least one doped semiconductor mirror.…”

Section: Atandt Bell Laboratories Murray Hill New Jersey 07974mentioning

confidence: 99%

“…Growth of nearly defect-free material can be credited with an improvement in lattice match relative to our previous efforts. 7 The reflectivity spectrum of the DBR is shown in Fig. 1.…”

Section: Atandt Bell Laboratories Murray Hill New Jersey 07974mentioning

confidence: 99%

“…Progress has also been made using thermally conductive dielectric mirrors. 5 An alternative all-epitaxial approach consists of using DBRs composed of antimonide compounds, which can be lattice matched to InP and have a high refractive index contrast.Recently, several groups have demonstrated highly reflective DBRs incorporating various antimonide compounds including: AlPSb/GaPSb on InP, 6 GaAsSb/AlAsSb on InP, 7 and AlGaAsSb/AlAsSb on InP. 8,9 All these structures were undoped, however, whereas an electrically injected VCSEL usually employs at least one doped semiconductor mirror.…”

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confidence: 99%

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Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

Blum

Hafich

Klem

et al. 1995

Applied Physics Letters

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We demonstrate an undoped 20 1 2 pair AlAsSb/GaAsSb distributed Bragg reflector ͑DBR͒ grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 m with a maximum reflectivity exceeding 99%. We also measure current-voltage characteristics in a similar 10 1 2 period p-type DBR and find that a current density of 1 kA/cm 2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported. © 1995 American Institute of Physics.Vertical-cavity surface-emitting lasers ͑VCSELs͒ have been demonstrated at a variety of wavelengths shorter than 1 m. 1,2 They have found many useful applications from short haul optical links to printing. Demonstration of similar devices at wavelengths longer than 1 m has been more problematic. This is because refractive index differences ͑⌬n͒ are relatively small between materials in the InGaAsP system, which is most commonly used in this wavelength range, and the distributed Bragg reflector ͑DBR͒ optical performance depends on ⌬n between the mirror layers. One approach to this problem has been wafer bonding of GaAs/AlGaAs DBRs to InP/InGaAsP active regions. In this manner, pulsed 1.3 ͑Ref. 3͒ and 1.55 m ͑Ref. 4͒ VCSELs have been demonstrated. Progress has also been made using thermally conductive dielectric mirrors. 5 An alternative all-epitaxial approach consists of using DBRs composed of antimonide compounds, which can be lattice matched to InP and have a high refractive index contrast.Recently, several groups have demonstrated highly reflective DBRs incorporating various antimonide compounds including: AlPSb/GaPSb on InP, 6 GaAsSb/AlAsSb on InP, 7 and AlGaAsSb/AlAsSb on InP. 8,9 All these structures were undoped, however, whereas an electrically injected VCSEL usually employs at least one doped semiconductor mirror. The issues of doping in these materials have not been explored in the context of DBR optical properties and electrical transport. As with VCSELs emitting at shorter wavelengths, the properties of doped DBRs can have a fundamental effect on the VCSEL performance, due to free carrier loss and thermal dissipation in the mirror. These are particularly critical for the p-type mirror, because of lower hole mobility and larger effective masses.In this letter, we report the highest demonstrated reflectivity for an undoped GaAsSb/AlAsSb DBR ͑RϾ99%͒, as well as a p-type GaAsSb/AlAsSb DBR and its optical and electrical characteristics. Both mirrors were grown by molecular beam epitaxy ͑MBE͒ lattice matched to InP with center wavelengths at 1.78 and 1.74 m, respectively. The main advantage of this material system is a large ⌬nϳ0.5, which enables fabrication of DBRs with relatively few mirror pairs and allows higher ultimate reflectivities in the presence of free carrier absorption. Lattice matching to InP also facilitates compatibility with the more mature InGaAs/InGaAsP materials for the active region. Shifting the absorption edge of the high refractive index layer toward shorte...

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A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

Filho

Dias

Duarte

et al. 2002

Superlattices and Microstructures

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Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

Cited by 43 publications

References 11 publications

Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

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