Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Dias, Ivan Frederico Lupiano; Duarte, José Leonil; Laureto, Édson; Gelamo, Rogério Valentim; Menezes, E. A.; Harmand, J. C.

doi:10.1006/spmi.2000.0847

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…Several technologies such as etched mesa, proton implanted, dielectric apertured and buried heterostructure [1][2][3][4][5] and doping profiles on GaAs and InP systems were developed to improve electrical properties of devices and allowed us to obtain threshold voltage compatible with laser working. The main improvements on DBRs properties were achieved thanks to the delta-doping profile, gradual doping levels, digital alloy gradient heterointerfaces or by choosing the most adapted material system when several possibilities existed for a given wavelength [6][7][8]. Antimonide-based DBRs were especially studied for the manufacture of structures emitting at a telecommunication wavelength.…”

Section: Introductionmentioning

confidence: 99%

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm

Pérona¹,

Garnache

Cerutti

et al. 2007

Semicond. Sci. Technol.

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This paper is dedicated to the study of electrical and optical properties of four different doped 21.5 pairs AlAsSb/GaSb distributed Bragg reflectors lattice-matched to GaSb and designed for the fabrication of electrically pumped VCSELs emitting around 2.3 µm. Three different doping profiles have been carried out: n-bulk doping, n-delta doping and p-bulk doping. An n-type bulk doped Bragg mirror with step composition at GaSb/AlAsSb interfaces was also tested. The n-type bulk doped sample with sharp interfaces exhibited the best electrical properties, a voltage drop per pair of 25 mV and a specific resistance of 1 × 10 −4 cm 2 at 1 kA cm −2 . Moreover, optical losses as low as 5-10 cm −1 have been measured for n-type doped mirrors.

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Section: Introductionmentioning

confidence: 99%

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm

Pérona¹,

Garnache

Cerutti

et al. 2007

Semicond. Sci. Technol.

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“…Several III-V semiconductor materials which satisfy some of the DBRs manufacturing conditions have been experimented on InP substrates. Material systems such as InGaAsP/InP [5,6], AlGaInAs/AlInAs [7,8] and AlGaAsSb/AlAsSb [9][10][11][12][13] have been used in light-emitting devices. Among these systems, the antimonide alloys exhibit the highest refractive index contrast [14,15].…”

Section: Introductionmentioning

confidence: 99%

A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

Filho

Dias

Duarte

et al. 2002

Superlattices and Microstructures

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Spectroscopy on Vertical Microcavities for the Mid-Infrared

Heiß

Schwarzl

Springholz

2001

phys. stat. sol. (a)

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Mid-infrared microcavities from IV-VI semiconductors (lead salts) are investigated by infrared transmission measurements. Epitaxial Pb 1--x Eu x Te/EuTe multilayers with an refractive index contrast of more than 80% are used as Bragg interference mirrors with a very large mirror stop band width. Therefore, the polarization splitting of cavity modes which are strongly detuned in respect to the center of the mirror stop band can by studied. It is found to show a quadratic dependence as function of the detuning energy. Furthermore, by inspecting the ratio between the width and the height of cavity resonances, the absorption edge of ordered, self-organized PbSe quantum dots is clearly detected.

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Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

Cited by 4 publications

References 7 publications

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm

A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

Spectroscopy on Vertical Microcavities for the Mid-Infrared

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