A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

Filho, D. O. Toginho; Dias, Ivan Frederico Lupiano; Duarte, José Leonil; Lourenço, Sidney Alves; Poças, Luiz Carlos; Laureto, Édson; Harmand, J. C.

doi:10.1006/spmi.2002.1046

Cited by 4 publications

(8 citation statements)

References 21 publications

(29 reference statements)

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“…Materials belonging to the group III-V antimonide family materials, such as GaAsSb and AlGaAsSb alloys, lattice matched to InP, have been used in the past for heterojunctions structures in electronic and optoelectronic devices in the range of 1.0-2.0 m. [1][2][3][4][5][6][7][8][9][10][11][12] These alloys show compositional inhomogeneity due to phase separation resulting from miscibility gaps. 13,14 Variation in the alloy composition produces fluctuation of the electrostatic potential, affecting excitonic transitions and donor and acceptor recombination.…”

Section: Introductionmentioning

confidence: 99%

Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Filho

Dias

Laureto

et al. 2005

Journal of Applied Physics

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Articles you may be interested inGaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics Appl. Phys. Lett. 105, 043105 (2014); 10.1063/1.4891557Molecular-beam epitaxy of phosphor-free 1.3 μ m InAlGaAs multiple-quantum-well lasers on InP (100) Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structuresWe identify quasi-donor-acceptor pair transitions in the photoluminescence spectra of GaAsSb and AlGaAsSb layers, lattice matched to InP, and grown by molecular-beam epitaxy. These alloys show compositional inhomogeneity due to phase separation resulting from miscibility gaps. The presence of Al in the quaternary alloy increases the fluctuation of the electrostatic potential in the epitaxial layer, increasing the variation of recombination energy as a function of intensity excitation in the range of low temperatures.

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Section: Introductionmentioning

confidence: 99%

Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Filho

Dias

Laureto

et al. 2005

Journal of Applied Physics

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“…Recently, there has been great interest in the materials belonging to the group of III-V antimonide family such as GaAsSb and AlGaAsSb alloys lattice matched to InP due to its applications in heterojunction structures employed in electronic and optoelectronic devices in the range of 1,0 µm and 2,0 µm [1][2][3][4][5][6][7][8]. As different semiconductor materials [9][10][11], the GaAsSb and AlGaAsSb alloys present fluctuation of the electrostatic potential in the epitaxial layers due to compositional inhomogeneity resulting from miscibility gap [10].…”

Section: Introductionmentioning

confidence: 99%

“…In vertical-cavity surface-emitting layers devices (VC-SELs), a mirror reflectivity exceeding 99% and a low electric perpendicular resistance are required for n-type and p-type Bragg mirrors. The high reflectivity is accomplished by employing high refractive contrast material systems such as AlGaAsSb/AlAsSb [8] and GaAsSb/AlAsSb [23]. However, these systems present a high band discontinuity, which is unfavorable to the current flow through the heterointerfaces [5].…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence properties of Te doped AlGaAsSb alloys

Filho¹,

Dias²,

Duarte³

et al. 2005

Braz. J. Phys.

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A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys lattice matched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employed to discuss the origin of the dominant transition and the influence of the presence of Al and Te on the fluctuation of the electrostatic potential in the epitaxial layers. The behavior of PL dominant transitions is associated with the quasi-donor-acceptor-pair (QDAP) model at a low temperature interval. The temperature dependence of photoluminescence intensities showed characteristics similar to those observed for amorphous semiconductors and disordered superlattices. The presence of two V elements, or the presence of Sb in the ternary and quaternary (III)-III-V-V alloys, causes a reduction in photoluminescence intensity temperature dependence, when compared to (III)-III-III-V alloys.

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“…Analyses employing the photoluminescence technique at the AlGaAsSb gap region as well as current-voltage curves and mirrors reflectivity measurements were performed. An initial study comparing the optical and electrical behavior of Bragg mirrors with digital alloy and homogeneous doping had already been previously performed (TOGINHO FILHO, 2002).…”

mentioning

confidence: 99%

A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.

et al. 2008

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The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, reflectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant reflectivity losses. Key words: Semiconductor. Bragg mirror. AlGaAsSb. AlAsSb. ResumoSão apresentadas as propriedades elétricas e ópticas de espelhos de Bragg com 6.5 períodos de AlGaAsSb/ AlAsSb não dopado e dopados com Te, sobre InP, crescidos por MBE com diferentes tipos de interface entre as camadas de material ternário e quaternário. As técnicas empregadas foram fotoluminescência, reflectividade e medições de IxV. A interface com liga digital em gradiente parece ser a melhor alternativa para otimizar condução elétrica sem perdas significativas da refletividade. Palavras-chave: Semicondutor. Espelhos de Bragg. AlGaAsSb. AlAsSb.

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A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

Cited by 4 publications

References 21 publications

Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Photoluminescence properties of Te doped AlGaAsSb alloys

A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.

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