Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors — Design and manufacture

Schmenger, Max; Meisser, Michael; Hamilton, Dean P.; Leyrer, Benjamin; Martin, B.; Mawby, P.A.; Blank, Thomas

doi:10.1109/epe.2015.7309050

Cited by 11 publications

(7 citation statements)

References 6 publications

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“…The thermal resistances from junction to heatsink Θ j h are evaluated as 2.4 and 2.1 K/W for low and high sides, respectively. This is comparable with power modules on a DBC material having similar thickness and semiconductor die area [5], [13]. The difference in thermal resistance between high-and low-side devices is 12%.…”

Section: Thermal Characteristicssupporting

confidence: 56%

“…by the emergence of new WBG devices. Due to the terminals and copper planes, a parasitic inductance of typically 10-30 nH [10]- [13] limits the utilization of the increased switching speeds of WBG semiconductors. A solution is to assemble every part of the switching device into a multilayer PCB, as shown in Fig.…”

mentioning

confidence: 99%

“…However, as the DBC is limited to only a single layer, it reduces the complexity of circuits that can be incorporated. An attempt to mitigate this issue is to use printed copper thick-film technology on the DBC [13], [19]. This increases the level of integration of the gate driver circuitry, but it is still not as compact as what is achievable using PCB technology.…”

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confidence: 99%

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A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Jørgensen

Bęczkowski

Uhrenfeldt

et al. 2019

IEEE Trans. Power Electron.

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New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated. This paper presents a fast-switching integrated power module based on gallium nitride enhancementmode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures. The structure of the proposed power module is presented, and the design of its gate driver circuit and board layout structure is discussed. The thermal characteristics of the designed power module are evaluated using COMSOL Multiphysics. An ANSYS Q3D Extractor is used to extract the parasitics of the designed power module, and is included in simulation models of various complexities. The simulation model includes the SPICE model of the gallium nitride devices, and parasitics of components are included by experimentally characterizing them up to 2 GHz. Finally, the designed power module is tested experimentally, and its switching characteristics cohere with the results of the simulation model. The experimental results show a maximum achieved switching transient of 64 V/ns and verify the power loop inductance of 2.65 nH.

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Section: Thermal Characteristicssupporting

confidence: 56%

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confidence: 99%

mentioning

confidence: 99%

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A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Jørgensen

Bęczkowski

Uhrenfeldt

et al. 2019

IEEE Trans. Power Electron.

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“…The other solution is the integration of DC capacitors inside the power module. This configuration provides a low loop inductance for the current commutation loop and thus minimizes the DC-side parasitic inductance [10,11]. A few recent studies reporting on integrating capacitors in a SiC MOSFET module mainly focused on module design and electrical characterization [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors

Yang

Dai

et al. 2018

IEEE Trans. Power Electron.

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Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET module with embedded DC-link capacitors. It shows faster switching transition and less overshoot voltage compared to a module using an identical package but without capacitors. Active power cycling and passive temperature cycling are carried out for package reliability characterization and comparisons are made with commercial Si and SiC power modules. Scanning acoustic microscopy images and thermal structure functions are presented to quantify the effects of package degradation. The results demonstrate that the SiC modules with embedded capacitors have similar reliability performance to commercial modules and that the reliability is not adversely affected by the presence of the decoupling capacitors.

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“…Required features of the power converters are increasing in terms of occupied volume, power quality, efficiency, reliability, maintainability, modularity, and cost. Innovative solutions can be found in literature for specific issues as the cooling integration to the module [1]- [5], or highly integrated systems to reduce as much as possible the stray inductances [6], sometime with gate-drivers, power stage, and DC-link in the same package, as in [7]. This last feature is particularly important in power switches designed for high frequency (e.i.…”

Section: Introductionmentioning

confidence: 99%

Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability

Cova

Delmonte

Solomon

et al. 2016

Microelectronics Reliability

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(2016) Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability. Microelectronics Reliability, 64 . pp. 507-512. ISSN 0026-2714 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/43872/1/Thermal%20design%20optimization%20of%20novel %20modular%20power%20converter%20assembly%20enabling%20higher%20performance %20reliability%20and%20availability.pdf The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. AbstractAn alternative integration scheme for a half-bridge switch using 70 m thin Si IGBTs and diodes is presented. This flat switch, which is designed for high-frequency application with high power density, exhibits high strength, high toughness, low parasitic inductance and high thermal conductivity. Such a novel assembly approach is suitable to optimize performance, reliability and availability of the power system in which it is used. The paper focuses on the thermal performance of this assembly at normal and extreme operating conditions, studied by means of FEM thermofluidynamic simulations of the module integrated with connectors and liquid cooler, and thermal measurement performed on an early prototype. Improved solutions are also investigated by the FE model.

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Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors — Design and manufacture

Cited by 11 publications

References 6 publications

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors

Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability

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