Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz

Teppati, Valeria; Zeng, Yuping; Ostinelli, O.; Bolognesi, C. R.

doi:10.1109/led.2011.2143690

Cited by 9 publications

(1 citation statement)

References 20 publications

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“…The n‐InP/p‐GaAsSb/n‐InP double heterojunction bipolar transistors (DHBTs) with a type‐II (staggered) band line‐up have attracted increased attentions due to their ability to eliminate current blocking effect at the base–collector interface enabling high device performance 1, 2. However, at emitter–base interface, the type‐II band line‐up may cause the increase in electron pile‐up and tunneling recombination resulting in the degradation of current gain 3.…”

Section: Introductionmentioning

confidence: 99%

Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

Wang

2012

Physica Status Solidi (a)

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In this work, the temperature-dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type-I InAlAs/GaAsSb emitter-base junction interface and a type-II GaAsSb/InP base-collector were studied. The experimental results reveal that electron injection at emitter-base junction could be affected by conduction barrier limited carrier transport. A conduction band edge discontinuity of 9.5 meV for InAlAs/GaAsSb heterojunction was experimentally estimated.

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Section: Introductionmentioning

confidence: 99%