Highly efficient and long life metal–insulator–metal cathodes

Kusunoki, Toshiaki; Suzuki, Mutsumi; Sagawa, M.; Mikami, Yoshiro; Nishimura, Etsuko; Ikeda, Masayoshi; Hirano, Takuichi; Tsuji, Kiichiro

doi:10.1116/1.4720096

Cited by 14 publications

(8 citation statements)

References 8 publications

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“…Planar-type electron sources based on a metal-oxide-semiconductor structure (MOS) can be operated at low vacuum, low voltage, and room temperature conditions [14][15][16][17], and 3 emit electron beams with small divergence angles [18]. Although these features are advantageous for the several applications, such as low-cost, high-resolution electron microscopes, highly sensitive image sensors [19], field emission displays [20], and electron beam lithography [21,22], they have a very low electron emission efficiency of 0.002 % [16].…”

mentioning

confidence: 99%

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

Murakami

Miyaji

Furuya

et al. 2019

Applied Physics Letters

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A graphene-oxide-semiconductor (GOS) planar-type electron source was fabricated by direct synthesis of graphene on an oxide layer via low-pressure chemical vapor deposition. It achieved a maximum electron emission efficiency of 32.1% by suppressing the electron inelastic scattering within the topmost gate electrode using graphene electrode. In addition, a 100-mA/cm 2 electron emission current density was observed at 16.2-% electron emission efficiency. The electron energy spread was well fitted to Maxwell-Boltzmann distribution, which indicates that the emitted electrons are thermally equilibrium state within the electron source. The full-width at half-maximum energy spread of the emitted electrons was approximately 1.1 eV. The electron emission efficiency did not deteriorate after more

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mentioning

confidence: 99%

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

Murakami

Miyaji

Furuya

et al. 2019

Applied Physics Letters

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“…The base electrode material is Al-Nd (2 at. 16 The fabrication process for the test panels was the same as that for the 32-in.-diagonal display panel we previously reported. The tunneling insulator was formed by anodically oxidizing the surface of the base electrode.…”

Section: Methodsmentioning

confidence: 99%

“…16)], the maximum energy of emitted electrons is (V d À /), which is equal to 2.5 eV. Since hot electrons in the top electrode are cut off by work function 3 [/ ¼ 3.9 eV (Ref.…”

Section: Beam Deflection Using Lateral Electric Fieldmentioning

confidence: 99%

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Stability of deflected-beam metal–insulator–metal tunneling cathodes under high acceleration voltage

Suzuki

Kusunoki

2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler-Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections Effect of degassed elements on the degradation behavior of carbon nanotube cathodes in sealed field emissionbacklight units Appl. Phys. Lett. 88, 063502 (2006); 10.1063/1.2167791Integration of high voltage field emission display followed by macro-and nanostructural analysis on microtip Metal-insulator-metal (MIM) tunneling cathodes have advantageous features, such as areal electron beams and robustness to surface contamination. Therefore, they are suitable for fieldemission displays. This paper reports the long-term stability of MIM tunneling cathodes in display panels operating under a high acceleration voltage (anode voltage). A preliminary life test was carried out using conventional display panels, which consisted of a phosphor-coated anode plate and a cathode plate having matrix-arrayed cathodes. The life test indicated that the pace at which cathodes degrade increases significantly when the acceleration voltage exceeds a few kilovolts. This high-voltage (HV)-induced degradation is presumably attributed to cathodes being bombarded by positive ions originating from residual gases. To suppress HV-induced degradation, the authors propose the concept of a deflected-beam cathode, in which electron beams are deflected so that the recoiling ions fail to hit the cathode. This concept was implemented by introducing deflector electrodes in the cathode plate, thereby forming an electron lens in each pixel. As 6-lm high scan lines were used as the deflector electrodes in this design, the deflected-beam cathodes could be fabricated only by modifying the pattern of the scan lines. The authors also present a simulationbased design procedure using an emitter-landing diagram, which facilitates analysis of the margins for the deflected-beam cathodes. The deflected-beam cathodes thus designed were incorporated into 3.8 cm-diagonal test panels to confirm the validity of the concept. The degree of beam deflection that was observed was in excellent agreement with the results obtained from simulation. A life test extending over a 20 000-h period demonstrated that the HV-induced degradation was suppressed with the deflected-beam MIM cathodes.

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“…In our experiment, the IM cathode contains a silica layer and a gold layer. IM cathodes have been widely reported as a promising cathode due to their nearly fluctuation-free emission current, emission uniformity, highly directional electron beam and inherent insensitivity for surface contamination [26][27][28]. For the IM cathode, when a gate voltage V g is applied between the base electrode and top electrode, the electrons emitted from the gold sharp edge will inject into the vacuum space and be accelerated by the high electric field.…”

Section: Fe Properties Of the Fun-membrane Cathodementioning

confidence: 99%

Freestanding membrane composed of micro-ring array with ultrahigh sidewall aspect ratio for application in lightweight cathode arrays

Wang¹,

Liu²,

Jiang³

et al. 2014

Applied Surface Science

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Highly efficient and long life metal–insulator–metal cathodes

Cited by 14 publications

References 8 publications

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

High-performance planar-type electron source based on a graphene-oxide-semiconductor structure

Stability of deflected-beam metal–insulator–metal tunneling cathodes under high acceleration voltage

Freestanding membrane composed of micro-ring array with ultrahigh sidewall aspect ratio for application in lightweight cathode arrays

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