Stability of deflected-beam metal–insulator–metal tunneling cathodes under high acceleration voltage

Abstract

Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler-Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections Effect of degassed elements on the degradation behavior of carbon nanotube cathodes in sealed field emissionbacklight units Appl. Phys. Lett. 88, 063502 (2006); 10.1063/1.2167791Integration of high voltage field emission display followed by macro-and nanostructural analysis on microtip Metal-insulator-metal (MIM) tunneling cathodes have advantageous features, such as areal electron beams and robustness to surface contamination. Therefore, they are suitable for fieldemission displays. This paper reports the long-term stability of MIM tunneling cathodes in display panels operating under a high acceleration voltage (anode voltage). A preliminary life test was carried out using conventional display panels, which consisted of a phosphor-coated anode plate and a cathode plate having matrix-arrayed cathodes. The life test indicated that the pace at which cathodes degrade increases significantly when the acceleration voltage exceeds a few kilovolts. This high-voltage (HV)-induced degradation is presumably attributed to cathodes being bombarded by positive ions originating from residual gases. To suppress HV-induced degradation, the authors propose the concept of a deflected-beam cathode, in which electron beams are deflected so that the recoiling ions fail to hit the cathode. This concept was implemented by introducing deflector electrodes in the cathode plate, thereby forming an electron lens in each pixel. As 6-lm high scan lines were used as the deflector electrodes in this design, the deflected-beam cathodes could be fabricated only by modifying the pattern of the scan lines. The authors also present a simulationbased design procedure using an emitter-landing diagram, which facilitates analysis of the margins for the deflected-beam cathodes. The deflected-beam cathodes thus designed were incorporated into 3.8 cm-diagonal test panels to confirm the validity of the concept. The degree of beam deflection that was observed was in excellent agreement with the results obtained from simulation. A life test extending over a 20 000-h period demonstrated that the HV-induced degradation was suppressed with the deflected-beam MIM cathodes.

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

“…Planar metal-oxide-semiconductor (MOS) electron emission devices − have excellent attributes, such as a low driving voltage, they function at low , and atmospheric pressures , and in liquids, − and have a low divergence angle for the electron beam . Several practical applications have been proposed, including in field emission displays, , in highly sensitive image sensors, − and for electron beam lithography systems. − The electron emission source plays a critical role in the performance of electron microscopy setups, such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography. Compared with Schottky-type electron sources and tungsten field emitters, MOS-type electron emission devices are disadvantaged by their broad emitted electron energy spread.…”