Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes

Perlin, P.; Czyszanowski, Tomasz; Marona, Ł.; Grzanka, S.; Kafar, Anna; Stanczyk, Szymon; Suski, T.; Leszczyński, M.; Boćkowski, M.; Muzioł, G.; Kuc, Maciej; Sarzała, Robert P.

doi:10.1117/12.906866

Cited by 13 publications

(6 citation statements)

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“…The value of absorption in real structures depends on many factors. The values reported in [14][15][16] are between 10 and 30 cm -1 , but in a recent paper [17] the authors say that the absorption in n-GaN can be as low as 1 cm -1 . In our analysis we consider absorption in the range from 5 to 23.5 cm -1 .…”

Section: Tuning Of the Active Area Positionmentioning

confidence: 97%

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Śpiewak¹,

Wasiak²,

Sarzała³

2020

Optica Applicata

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This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing wave anti-node, and positioning of the active area at different anti-nodes are considered.

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Section: Tuning Of the Active Area Positionmentioning

confidence: 97%

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Śpiewak¹,

Wasiak²,

Sarzała³

2020

Optica Applicata

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“…The substrates for making laser diodes (from 16 mm up to 1.5 inch in diameter) can be prepared (see Figure 15.12). The laser diodes made on HNPS-MFS-GaN substrates (by MOCVD technology), emitted at 390-420 nm, had typical threshold voltages of 4.5 V at 2.5 kA cm À2 and lifetimes of up to 5000 h [44]. The plasmonic GaN substrate has the advantage of increasing the refractive index contrast between substrate and epitaxial laser diode structure, suppressing optical mode leakage into the substrate and optimizing the optical mode in the active region.…”

Section: Conductive (N-type) Hnps-mfs-gan Crystalsmentioning

confidence: 99%

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Ehrentraut

Boćkowski

2015

Handbook of Crystal Growth

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“…The analytical fit of the absorption is based on results reported in Ref. 5. The high level of absorption at low doping densities is induced by impurities in the substrate.…”

Section: Numerical Model and Structurementioning

confidence: 99%

Optical optimization of InGaN/GaN edge-emitting lasers with reduced AlGaN cladding thickness

Czyszanowski

Stanczyk

Kafar

et al. 2014

Jpn. J. Appl. Phys.

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This paper presents an extensive numerical analysis and experimental testing of a 420 nm InGaN edge-emitting laser grown on plasmonic GaN substrate. Using a simple transfer matrix method, we investigate the influence of waveguide, bottom AlGaN cladding and substrate parameters on the modal gain and the distribution of the mode. Numerical analysis reveals that using plasmonic substrate the thickness of the n-cladding layer can be reduced to as little as 100 nm. In experimental tests, reducing the AlGaN bottom cladding down to 200 nm is shown to cause no worsening of the threshold parameters.

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Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes

Cited by 13 publications

References 0 publications

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Optical optimization of InGaN/GaN edge-emitting lasers with reduced AlGaN cladding thickness

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