Highly doped 1.55 µm GaxIn1-xAs/InP distributed Bragg reflector stacks

Guy, P.; Woodbridge, K.; Haywood, S. K.; Hopkinson, M.

doi:10.1049/el:19941055

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1995

2021

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Cited by 8 publications

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“…Interband absorption at photon energies near the bandgap can be reduced by high n-doping [23]. This Burstein effect has been used in (8) InGaAs/InP DBRs [25] employing n-doped InGaAs with a calculated bandgap of 0.75 eV, but at very high n-doping levels, free carrier absorption may dominate and hence limit the reflectivity. The effect of p-doping on the absorption is the reverse of that of n-doping: it tends to increase near band-edge absorption due to the impurity bands which form at the acceptor level [24].…”

Section: Discussionmentioning

confidence: 99%

Material parameters of quaternary III - V semiconductors for multilayer mirrors at wavelength

Güden

Piprek

1996

Modelling Simul. Mater. Sci. Eng.

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Nine quaternary (Al,Ga,In)-(P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at 1.55 µm wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.

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