High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 [micro sign]m surface emitting lasers

Genty, F.; Almuneau, Guilhem; Chusseau, Laurent; Boissier, G.; Malzac, J. P.; Salet, P.; Jacquet, J.

doi:10.1049/el:19970112

Cited by 23 publications

(8 citation statements)

References 4 publications

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“…Recently, the GaAsSb system has gained attention because such structures can also be grown for device applications in the 1.55 m region. [6][7][8][9][10][11] As we show below, from the D'yakonov-Perel ͑DP͒ mechanism of spin relaxation, 12 the GaAsSb system is expected to exhibit Ͼ6 times shorter relaxation times than the InGaAs system, pointing to a possible subpicosecond response. Since this ultrafast relaxation is related to an intrinsic property of the system, devices with a switching time Ͻ250 fs would be attainable, without the need to use low-temperature growth or defectinduced recovery time reduction, which have the undesirable consequence of degraded optical nonlinearity at the band edge.…”

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confidence: 90%

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Hall

Leonard

Driel

et al. 1999

Applied Physics Letters

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Spin relaxation times in GaAs x Sb 1Ϫx quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 m, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with xϭ0 and 0.188, respectively. These times are Ͼ5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga͑As͒Sb system, consistent with the D'yakonov-Perel theory of spin relaxation ͓M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 ͑1974͔͒. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 m with response time Ͻ250 fs.

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confidence: 90%

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Hall

Leonard

Driel

et al. 1999

Applied Physics Letters

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“…In the case of the AlGaAsSb/AlAsSb system on InP, type-I interfaces can be found between AlGaAsSb and AlAsSb layers (Г-X valleys) with barrier of ~0.47 eV and an type-II interface between the most inner AlGaAsSb layer and the InP substrate (Г-Г valleys) with barrier of ~0.31 eV (DIAS, 1997;GENTY, 1997). A schematic diagram of the band structure with alignment between conduction and valence bands of the AlAsSb materials (valley X, dotted line), AlGaAsSb and InP is presented in Figure 3.…”

Section: Resultsmentioning

confidence: 99%

“…Heterostructures from Sb family materials such as AlGaAsSb/AlAsSb with lattice matched to InP are considered as good alternative in the manufacturing of Bragg mirrors employed in vertical-cavity surface emitting lasers (VCSEL) in the region of 1.55 μm, (BLUM, 1995;DIAS, 1997;GENTY, 1997;DIAS, 1998). The high refractive index contrast (Δn) between alloys AlGaAsSb and AlAsSb allows the preparation of high-reflectivity Bragg mirrors (99%) required for VCSEL operation with a small number of periods (~20) (DIAS,1998).…”

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confidence: 99%

A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.

et al. 2008

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The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, reflectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant reflectivity losses. Key words: Semiconductor. Bragg mirror. AlGaAsSb. AlAsSb. ResumoSão apresentadas as propriedades elétricas e ópticas de espelhos de Bragg com 6.5 períodos de AlGaAsSb/ AlAsSb não dopado e dopados com Te, sobre InP, crescidos por MBE com diferentes tipos de interface entre as camadas de material ternário e quaternário. As técnicas empregadas foram fotoluminescência, reflectividade e medições de IxV. A interface com liga digital em gradiente parece ser a melhor alternativa para otimizar condução elétrica sem perdas significativas da refletividade. Palavras-chave: Semicondutor. Espelhos de Bragg. AlGaAsSb. AlAsSb.

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“…From the average power-scaling point of view, smaller number of heteroepitaxial layers is also desirable as the thermal conductivity of the stack decreases as the number of layers grows [59,60]. High-index-contrast lattice-matched gratings can be grown using GaAs/AlAs and GaAsSb/AlAsSb systems [51,61,62], where the index difference of about 0.55 and 0.61 can be achieved. The difficulty arises for QW-SAMs deemed for operation in an optical communications window of 1.5 μm where the lattice-matched InGaAs/InP QW would be a good option for the absorber layer.…”

Section: Quantum-well Saturable Absorbers: Overviewmentioning

confidence: 99%

Semiconductor Quantum‐Dot Saturable Absorber Mirrors for Mode‐Locking Solid‐State Lasers

Pasiskevicius

Meiser

Butkus

et al. 2014

The Physics and Engineering of Compact Quantum Dot‐based Lasers for Biophotonics

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Scope of the ChapterThe main aim of this chapter is to give an account of the recent achievements in the development of semiconductor quantum dot saturable absorber mirrors (QD-SAMs) for picosecond and subpicosecond pulse generation in bulk solid-state lasers. This work benefited immensely from previous development of methods for self-assembled growth of uniform, controlled-size, and high-density InAs QD layers on GaAs substrates and the technologies, primarily destined for diode lasers [1].This work also leans heavily on the knowledge developed in the area of passively mode-locked solid-state lasers employing quantum-well saturable absorbers (QWSAMs). Indeed, the dynamics in a mode-locked bulk solid-state laser is similar for quantum well (QW) and QD-SAMs and therefore most of the design guidelines devised for QW structures apply for QD-SAMs as well. Nevertheless, QD-SAMs offer certain unique physical properties such as low saturation fluence, temperature stability, relatively large inhomogeneous broadening, and transition energy scaling due to quantum size effect, all of which can be exploited to advantage in mode-locked solid-state lasers.Realizing that we are approaching the 50-year anniversary from the first demonstration of mode-locked laser operation, we felt it appropriate to give a brief overview of the development of passively mode-locked lasers and try to give a brief account of how the semiconductor saturable absorber technology emerged and was developed to become dominant as it is today. Owing to limitations on the length of this text, this overview is necessarily very cursory where we only mark certain milestones of this exciting journey. A large and growing number of review articles have appeared along the way, and the interested reader is well advised to turn to those in order to delve deeper into the different aspects of the subject. Following the brief overview, we focus in more detail on specific requirements and properties of QD-SAMs. After that we give an account of the experimental realization of mode-locked bulk solid-state lasers in different spectral ranges: Yb:KYW operating around 1.04 μm, Cr:forsterite -around 1.26 μm, and Er:Yb:glass laser -around 1.53 μm, all usingThe Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics, First Edition. Edited by Edik U. Rafailov.

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High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 [micro sign]m surface emitting lasers

Cited by 23 publications

References 4 publications

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.

Semiconductor Quantum‐Dot Saturable Absorber Mirrors for Mode‐Locking Solid‐State Lasers

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