Highlighting some layers properties in performances optimization of CIGSe based solar cells: Case of Cu(In, Ga)Se–ZnS

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

“…There are several BSF layers or HTLs that have been introduced between the CIGS and back electrode in the CIGS heterojunction TFSC to explore the output performances theoretically and experimentally. [ 19,21,14–17,75–77 ] The PV output parameters of the optimized CIGS solar cell with Cu 2 O HTL in comparison with other reported CIGS TFSCs with different buffers and HTLs or BSFs are demonstrated in Table 4 . The Cu 2 O HTL material shows advantageous properties such as nontoxicity, material abundance, and a relatively higher absorption coefficient than others.…”

“…In the former investigations, several thin‐film CIGS heterojunction PV device arrangements with various hole transport layers (HTLs) or back surface field (BSF) layers at back contact and alternative buffers to CdS in the front side have been proposed and assessed to realize superior solar cell characteristics experimentally [ 14–18 ] and numerically. [ 19–24 ] With a heterojunction device of MgF 2 /Ni/Al/ZnO/CdS/CIGS/Mo/SLG employing CdS buffer to combine with CIGS, the PV efficiency of 19.9% is found. [ 14 ] The experimental efficiency of heterojunction cadmium (Cd)‐free CIGS solar device with ZnS buffer prepared by the chemical bath process is obtained to be 18.1%.…”

“…[ 20 ] The cell efficiency of 26.30% is attained with the heterojunction configuration of Ni or Al/MgF 2 /i‐ZnO/ZnS/SDL/CIGS/Mo utilizing the 2.5 μm‐thick CIGS absorber layer. [ 21 ] A MoO 3 interfacial layer has been added at the back of the CIGS absorber, and the improved efficiency of 24% is obtained by reducing the back surface recombination. [ 22 ] Another investigation has stated the efficiency of 26.4% for the heterojunction PV configuration of i‐ZnO/WS 2 /CIGS/Mo, where tungsten disulfide (WS 2 ) as a buffer is introduced.…”

Performance Analysis of CZTSe Kesterite Solar Cell by Adding CZTSSe as BSF Layer

“…The whole manufacturing method flow of kesterite-based solar cells with and without its back surface field layer is discussed in depth in the literature [24,25,26,27].…”

“…[12,13]. Also CZTSSe [24,25,26,27] is composed of elements that are abundantly available and non-toxic. CZTSSe also has a low production cost [14], p-type conductivity [15], high absorption coefficient of '> 10 4 ' and a tunable bang-gap with in limit of 0.95 -1.5 eV making it easier for mass production [16] In this work, comparison study of CZTSe structure with our novel structure CZTSe/CZTSSe is proposed to enhance the solar cell performance.…”