High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

Umeda, Hidekazu; Takizawa, Toshiyuki; Anda, Yoshiharu; Ueda, T.; Tanaka, Tsuyoshi

doi:10.1109/ted.2012.2230264

Cited by 28 publications

(15 citation statements)

References 20 publications

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“…They claimed that the E A ∼0.7 eV was related to lattice damage by ions whereas the reduced E A ∼0.35 eV was associated to the deep level of Fe + ions at Ga sites. On the other hand, although R sh of Ar + implant‐isolation rapidly decreased after high temperature (>800 °C) annealing, the E A at ∼0.5 eV was nearly not influenced by annealing up to 1200 °C, suggesting that the origins of high resistivity were solely due to the recoverable lattice damage . Similar to the case of Ar + implant‐isolation, 131 Xe + ions cannot occupy Ga sites and then form deep levels in the lattice as both Ar + and 131 Xe + are inert gas species.…”

Section: Resultsmentioning

confidence: 97%

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation

Arulkumaran

et al. 2017

Phys. Status Solidi A

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This work investigates the multi‐energy ultra‐heavy 131Xe+ ion implantation for the realization of planar AlGaN/GaN high electron mobility transistors (HEMTs) on Si. The 131Xe+ implant‐isolation in AlGaN/GaN HEMT structure exhibited an order of magnitude lower buffer leakage current as well as an order of magnitude higher ON/OFF current ratio (Ion/Ioff) and sheet resistance (Rsh) when compared with conventional mesa‐isolation process. The isolated region by 131Xe+ implantation demonstrated good thermal stability in the isochronal annealing up to 800 ºC. A stable buffer breakdown voltage with and without Si3N4 passivation were observed using implant‐isolation. The AlGaN/GaN HEMTs isolated by 131Xe+ implantation exhibited good pinch‐off characteristics with one order of magnitude lower OFF‐state source‐drain leakage and reverse gate leakage current and improved OFF‐state breakdown voltages by ∼106–128 V as compared to the mesa‐isolated devices. An activation energy of 0.513 eV was extracted, which denotes the energy level of lattice damage by 131Xe+ ions. These results indicate that multi‐energy implant‐isolation by ultra‐heavy 131Xe+ ions is promising for the fabrication of planar AlGaN/GaN HEMTs with improved device characteristics.

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Section: Resultsmentioning

confidence: 97%

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation

Arulkumaran

et al. 2017

Phys. Status Solidi A

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“…Ion implantation is an adding process, as shown in Figure 4b. The ion species can be used to isolate devices including H, He, N, P, Ar, O and so forth [62][63][64][65][66][67]. In the implantation process, atoms are added into the nitrides by means of energetic ion beam injection.…”

Section: Ion Implantationmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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“…In a previous work, trap-related dispersion effects and threshold-voltage instabilities have been associated in the devices under study to a dominant acceptorlike behavior of C doping related to CN states [2], whereas negligible trapping effects have been found in devices where C doping resulted in the formation of perfectly self-compensating CGa-CN states [1]. In the simulations of lateral ohmic-to-ohmic structures, the Ar isolation implant is modeled by following [6].…”

Section: Test Devices and Numerical Modelsmentioning

confidence: 99%

Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

Curatola

Huber

Daumiller

et al. 2015

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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A consistent description of breakdown characteristics in ohmic-to-ohmic, ohmic-to-substrate and HEMT structures has been achieved by means of device simulations for a depletion-mode AlGaN/GaN MIS-HEMT technology on Si substrate suited for power switching applications. For relatively short gate-drain distances or ohmic-to-ohmic spacings, source-drain punch-through is suggested to be the limiting breakdown mechanism in either HEMTs under off-state conditions or ohmic-to-ohmic isolation test structures, respectively. The mechanism ultimately limiting the HEMT off-state voltage blocking capability is instead the vertical drain-to-substrate breakdown for long gate-drain spacings. The latter phenomenon is induced, in HEMTs on a low-resistivity p-type substrate like those considered here, by the triggering of a high-field carrier generation mechanism rather than by carrier injection

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High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

Cited by 28 publications

References 20 publications

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

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High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

Cited by 28 publications

References 20 publications

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy 131 Xe+ implantation

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy 131 Xe+ implantation

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

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Product

Resources

About

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy ¹³¹ Xe⁺ implantation