High transparent and conductive undoped ZnO thin films deposited by reactive ion-beam sputtering

Golovynskyi, Sergii; Євтушенко, А. І.; Mamykin, S.V.; Dusheiko, Mykhailo; Golovynska, Iuliia; Bykov, О.І.; Olifan, Olena; Myroniuk, D. V.; Tkach, S. V.; Qu, Junle

doi:10.1016/j.vacuum.2018.04.019

Cited by 15 publications

(6 citation statements)

References 32 publications

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“…Optical transmittance spectrum shows that the films have high transmission in the visible region. This observation is in line with relevant literature (Golovynskyi et al, 2018). The absence of optical interference fringes in the spectrum indicates that the ZnO films are thin (Cruz et al, 2018).…”

Section: Resultssupporting

confidence: 91%

Optical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering

Şenay¹

2019

Gümüşhane Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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In this research, ZnO thin films were deposited on glass microscope slides in three separate experiments with RF input powers of 50 W, 100 W and 125 W by means of RF magnetron sputtering technique. Each deposition process was conducted for 30 minutes. Spectroscopic reflectometer, UV-VIS spectrophotometer and atomic force microscope (AFM) were used to examine the effect of sputtering power on the optical and surface properties of the produced thin films. The level of reflectivity and transparency, refractive index and band gap energy values as well as surface homogeneity and roughness were observed to rely on the RF input power. The optical band gap energy values were about 3.83-3.87 eV. The produced highly transparent ZnO thin films can be used in various optoelectronic devices and future transparent conductive electrode implementations.

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Section: Resultssupporting

confidence: 91%

Optical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering

Şenay¹

2019

Gümüşhane Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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“…[ 2 ] It is shown that our method allows to grow high‐quality ZnO:Al films. [ 3 ] ZnO:Al films with different concentrations of aluminum impurities were deposited on Si and glass wafers by changing Al concentration in metallic Zn–Al sputtering and by variation of technological parameters of MS. The set of ZnO:Al films with a concentration of Al in the range from 0.22 to 1.22 at% were grown.…”

Section: Methodsmentioning

confidence: 99%

Behavior of Al Impurity in ZnO Films: Influence of Al‐Level Doping on Structure, X‐Ray Photoelectron Spectroscopy and Transport Properties

Євтушенко

Baibara

Дранчук

et al. 2022

Physica Status Solidi (a)

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Transparent conductive oxides (TCO) having a wide bandgap, high transparency, and conductivity are necessary materials for fabricated photovoltaic heterostructure solar cells, transparent conducting electrodes, window materials, displays, etc. Today, the most widely used TCO are indium tin oxide (ITO), which has suitable characteristics. However, ITO has some negative factors such as the limited deposits of indium in the Earth's crust causing a constant increase in its cost, and also high toxicity and environmental hazard industrial-scale production. These factors are the reasons for replacing ITO with more safe, economically profitable, and affordable materials. Zinc oxide doped by donor impurities of Al, Ga, or In is a promising material for future technologies of electronics and optoelectronics. In economic terms, aluminum is the most favorable donor impurity. [1] Al-doped ZnO (ZnO:Al) overcomes all aforementioned negative factors. The material is nontoxic, the prevalence of raw materials in the Earth's crust, high stability to hydrogen plasma, and temperature changes. ZnO has a wide direct band gap (%3.34 eV at room temperature) that allows to be highly transparent (%85-95%) in a wide range of wavelengths (300-1000 nm). In several of our previous articles, we have comprehensively investigated the effect of deposition technological parameters on the structural, optical, and electrical properties of zinc oxide films. [2][3][4][5] However, the problem of small electroactivity (EA) for introduced donor impurities into the ZnO lattice still exists. [6] EA of the impurity is a very important characteristic of a doped semiconductor. The conductivity of semiconductor doping by donor impurity (in our case Al in ZnO) is determined not only by the mobility of free carriers but also their concentration, and, hence, the EA of donor impurity. The EA means the number of conductivity electrons that which donor impurity atom delivers to the conduction band (EA ¼ 100% means that each Al ion, substituted Zn ion in cation sublattice deliver one electron into the conduction band). [7] Really EA < 100%, because of different reasons. When ZnO is doped with aluminum, the intrinsic

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“…Zinc oxide is considered as a promising material for optoelectronic and photovoltaic devices . It can be easily doped by III‐group impurity elements such as indium, gallium, or aluminum to obtain films of high conductivity and optical transparency (TCO films) becoming a candidate to be used instead of indium‐tin oxide (ITO) films.…”

Section: Introductionmentioning

confidence: 99%

“…

Zinc oxide is considered as a promising material for optoelectronic and photovoltaic devices. [1][2][3] It can be easily doped by III-group impurity elements such as indium, gallium, or aluminum to obtain films of high conductivity and optical transparency (TCO films) becoming a candidate to be used instead of indiumtin oxide (ITO) films. Because ITO material is of great demand due to the permanent growth of photovoltaic market, ZnO:Al films are considered as a good and more cheaper TCO material.

…”

mentioning

confidence: 99%

Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering

Karpyna

Євтушенко

Kolomys

et al. 2020

Physica Status Solidi (b)

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Optical properties of as‐grown high nitrogen‐doped ZnO:Al,N films (with a variation of nitrogen concentration from 2.3 to 4.3 atomic %) are studied by Raman, photoluminescence, and Fourier‐transform infrared spectroscopy (FTIR). The intensity of mode A1LO, peaked at 580 cm−1, increases with increasing nitrogen concentration. The silent mode B1low at 275 cm−1 is clearly observed testifying increased disorder‐activated scattering in ZnO. Photoluminescence spectra reveal near‐band edge emission as well as several defect‐related bands, the intensity of which increases with nitrogen content. The blue band (2.61 eV) can be related to the transition from shallow donor level to deep nitrogen acceptor level. Also, incorporation of nitrogen in ZnO lattice causes appearance of both Zni and Oi defects responsible for violet (3.08 eV) and yellow (2.16 eV) emission band, respectively. At the same time near‐band edge emission of ZnO:Al,N films is not suppressed by simultaneously introduced Al and N impurities. Al compensates distortions in ZnO crystal lattice caused by nitrogen doping and, thus, stabilizes near‐band edge emission.

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High transparent and conductive undoped ZnO thin films deposited by reactive ion-beam sputtering

Cited by 15 publications

References 32 publications

Optical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering

Optical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering

Behavior of Al Impurity in ZnO Films: Influence of Al‐Level Doping on Structure, X‐Ray Photoelectron Spectroscopy and Transport Properties

Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering

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