High-throughput, high-resolution electron-beam lithography

Effects of fast secondary electrons to low-voltage electron beam lithography

“…, where r ; is the position vector of the l h electron in the target. The first term in equation (3,11) represents Coulomb attraction by the nucleus while the second term is a sum of the repulsive effects of each atomic electron. Thus the quantity, da/dO.…”

“…A simpler way of incorporating screening, the second term in equation (3,11 ), is to assume a charge density for the target ( atom in general or unit cell for solids) in which the reduced potential will take the form of a Yukawa expression in which the nuclear potential is attenuated exponentially as a function of distance r from the nucleus: (3,13) where r 0 is the screening radius. The angular distribution of the elastic scattering is:…”

Electron beam lithography tool for manufacture of X-ray masks

“…This ' Leica-Ixltz, Inc., 24 Link Drive, Rockldgh, NJ 05647. [9]. The higher voltage also provides added immunity against stray fields.…”

Advanced electron-beam lithography for 0.5-µm to 0.25-µm device fabrication

“…Similar to the proximity effect is the influence of electronbeam probe size (measured as the width at half maximum of an e-beam with a Gaussian distribution of beam current density and as the edge slope definition [8] for a shaped e-beam) on exposed resist profiles. As shown in the scanning electron micrographs of Figure 3 for single-line exposures, the beam size has an effect upon the development of the exposures [9].…”