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2003
DOI: 10.1016/s0026-2714(03)00318-4
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High temperature reliability on automotive power modules verified by power cycling tests up to 150°C

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Cited by 31 publications
(27 citation statements)
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“…Several papers have also been published on the topic of power modules accelerated ageing tests (thermal cycling and power cycling) in order to estimate the level of semiconductors expectancy lifetime [17]- [18] and to study the failure mechanisms and effects [18]- [20]- [21]. It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
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“…Several papers have also been published on the topic of power modules accelerated ageing tests (thermal cycling and power cycling) in order to estimate the level of semiconductors expectancy lifetime [17]- [18] and to study the failure mechanisms and effects [18]- [20]- [21]. It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
“…It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor. Examples of these internal failures are: bond wire lift off, gate leakage failure and damages on semiconductors chip and solder [18], SiAl contact ageing [21], electro-migration effect [20], latch-up [23]. These internal failures can modify the operating state of the semiconductor and induce abnormal behavior like OC or SC states.…”
Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning
confidence: 99%
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“…Le diamètre des fils de bonding est généralement de 300 µm dans les modules de moyenne puissance. Une étude récente sur la fatigue thermo-mécanique de modules de puissance dédiés aux applications de traction automobile (véhicule hybride et alterno démarreur) a montré que la levée des fils de bonding pouvait être la principale cause de défaillance [7] lors d'un fonctionnement à haute température (la température de la puce varie entre 85°C et 150°C dans le cas présent, et celle du boîtier entre 50°C et 115°C).…”
Section: Bunclassified
“…Ces deux réseaux nécessitent des dispositifs électroniques de puissance qui satisfassent à la fois des contraintes de coût et un besoin en terme de durée de vie de l'ordre de 8000h de fonctionnement, (ce qui correspond à environ 200.000km) dans un environnement thermique nominal de 90°C pouvant monter jusqu'à 120°C et de l'ordre de 400 kcycles de puissance [7].…”
Section: Applications Automobilesunclassified