High-temperature relaxor ferroelectric behavior in Pr-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>

Ranjan, Rajeev; Hackl, R.; Chandra, Amreesh; Schmidbauer, E.; Trots, D.; Boysen, H.

doi:10.1103/physrevb.76.224109

Cited by 47 publications

(39 citation statements)

References 37 publications

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“…In conformity with the previous studies, 15,16 XRPD at 300 K of STP-05 revealed a cubic structure. Figure 1 shows XRPD patterns of the calculated, observed, and difference profiles after Rietveld refinement with the cubic perovskite structure.…”

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confidence: 92%

“…16 Relative permittivity of platinum electroded ceramic pellet of SPT-05 was measured as a function of temperature with a HP 4192 impedance analyzer. Temperature dependent XRPD study up to 400°C was carried out at HASYLAB ͑B2 beamline͒ at the synchrotron source DESY using a wavelength of 0.79 809 Å ͑calibrated with LaB 6 pattern͒.…”

mentioning

confidence: 99%

“…2- 16 At low temperatures bulk ST is an incipient ferroelectric/quantum paraelectric. 1 The onset of a ferroelectric state is suppressed by the groundstate quantum fluctuations of the soft mode.…”

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Onset of spontaneous electrostrictive strain below 520 K in Pr-dopedSrTiO3

et al. 2008

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Sr 0.95 Pr 0.05 TiO 3 ceramic is shown to exhibit anomalous value of cubic lattice parameter at room temperature. A combination of temperature dependent dielectric and synchrotron x-ray powder-diffraction study has revealed that the anomalous lattice parameter has contribution from spontaneous electrostrictive strain that sets in below 520 K. In analogy with the lead-based classical relaxor ferroelectrics, it is suggested that Pr-doped SrTiO 3 is a new class of high-temperature lead-free relaxor ferroelectric system. DOI: 10.1103/PhysRevB.78.092102 PACS number͑s͒: 77.84.Dy, 65.40.Ϫb, 77.22.Ϫd Ever since the discovery of quantum paraelectricity, 1 the polar properties of SrTiO 3 ͑ST͒ have been investigated extensively in pure and mixed forms.2-16 At low temperatures bulk ST is an incipient ferroelectric/quantum paraelectric. The onset of a ferroelectric state is suppressed by the groundstate quantum fluctuations of the soft mode.1 The resulting delicate dielectric state is highly susceptible to dopants and external perturbations. Since the dipolar correlation length of incipient ferroelectric systems grow substantially only well below room temperature, 13 the effect of perturbing fields, more particularly the local electric fields due to chemical substitutions, is expected to be more effective in bringing about a ferroelectric state at cryogenic temperatures. Studies in the past, on the two well-known quantum paraelectric systems, ST ͑Refs. 2-8, 17, and 18͒ and KTaO 3 , [19][20][21][22][23] have shown that ferroelectric correlations develop only at temperatures well below room temperature ͑300 K͒. In this scenario, unless something dramatic takes place, a ferroelectric state by chemical substitutions in quantum paraelectric systems is not expected to occur at high temperatures ͑near 300 K or above͒. Recently, contrary to this intuitive perception, ferroelectricity at 300 K was reported in Pr-doped ST ceramics. 15 Observation of maxima at ϳ500 K in the temperature dependence of permittivity ͓Ј͑T͔͒, and dielectric hysteresis at 300 K was considered as evidence in support of this claim.15 However, apart from these macroscopic measurements, so far there has been no report of microscopic ͑structural͒ evidence related to the onset of ferroelectricity in Pr-doped ST. In this Brief Report, we present the results of a temperature dependent synchrotron x-ray powder-diffraction ͑XRPD͒ study on a representative Pr-doped SrTiO 3 composition, Sr 0.95 Pr 0.05 TiO 3 ͑SPT-05͒. It is shown that the system exhibits spontaneous electrostrictive strain below 520 K, a phenomenon which is known for the well-known hightemperature relaxor ferroelectric systems, Pb͑Mg 1/3 Nb 2/3 ͒O 3 ͑PMN͒ and La-substituted Pb͑Zr 1−x Ti x ͒O 3 ͑PLZT͒.Ceramic specimen of Sr 0.95 Pr 0.05 TiO 3 ͑SPT-05͒ was prepared by standard solid-state reaction method. 16 Relative permittivity of platinum electroded ceramic pellet of SPT-05 was measured as a function of temperature with a HP 4192 impedance analyzer. Temperature dependent XRPD study up to 400°C was c...

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Onset of spontaneous electrostrictive strain below 520 K in Pr-dopedSrTiO3

et al. 2008

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“…However, there is an onset of high temperature dielectric relaxation process beyond 300 K that originates mainly from the presence of polar nano-regions in the sample as already observed from Raman studies. 17 It can be noted that for a given frequency the loss tangent tends to peak ahead of the dielectric constant and the rising (peaking) of both these parameters shifts to higher temperature with increasing frequency, suggestive of features of high temperature relaxor ferroelectricity. …”

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confidence: 92%

“…3) where no structural phase transition is expected and is considered as evidence of the existence of polar nano-regions in the material. 17 The smaller effective ionic radii of sixfold coordinated Si 4þ (0.400 Å ) compared with that of Ti 4þ (0.605 Å ) 18 can cause Si 4þ to adopt offcentered positions and create electric dipoles around which polar nano-regions can develop. It was found that the eigenfrequencies of the three TO optical phonon modes (TO 1 TO 2 and TO 4 ) 19 that characterize dielectric response of SSTO are lower (softened) in comparison with that of pure STO.…”

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confidence: 99%

Disorder driven structural and dielectric properties of silicon substituted strontium titanate

Dugu

Pavunny

Sharma

et al. 2015

Journal of Applied Physics

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A systematic study on structural, microstructural, optical, dielectric, and electrical properties of phase-pure silicon-modified SrTiO3 polycrystalline electroceramics synthesized using high energy solid state reaction techniques is presented. The asymmetry and splitting in the x-ray diffractometer spectra and the observation of first order transverse optical TO2 and longitudinal optical LO4 modes in Raman spectra (nominally forbidden) revealed the distortion in the cubic lattice as a result of breaking of inversion symmetry due to doping. A bandgap Eg of 3.27 eV was determined for the sample by diffuse reflectance spectroscopy. A high dielectric constant of ∼400 and very low dielectric loss of ∼0.03 were obtained at 100 kHz near ambient conditions. The temperature dependence of the dielectric data displayed features of high temperature relaxor ferroelectric behavior as evidence of existence of polar nano-regions. The ac conductivity as a function of frequency showed features typical of universal dynamic response and obeyed a power law σac=σdc+Aωn. The temperature dependent dc conductivity followed an Arrhenius relation with activation energy of 123 meV in the 200–500 K temperature range. The linear dielectric response of Pt/SrSi0.03Ti0.97O3/Pt dielectric capacitors was well characterized. The measured leakage current was exceptionally low, 13 nA/cm2 at 8.7 kV/cm, revealing an interface blocked bulk conduction mechanism.

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Effect of BiFeO₃ Doping and Annealing Temperature on the High‐Temperature Dielectric Relaxation Properties in BaTiO₃–SrTiO₃ Lead‐Free Ceramics

Guo

et al. 2023

Physica Status Solidi (b)

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Lead‐free xBiFeO3–(1−x)BaTiO3–SrTiO3 solid‐solution ceramics are synthesized and their structure and dielectric and ferroelectric properties are studied. It is observed that the dielectric relaxation process (marked as Region I) triggered by polar nanoregions (PNRs) related to Fe2+/Fe3+ valences may cover the relaxation process induced by oxygen vacancies (OVs, marked as Region II) at 1150 and 1200 °C. The changes in relaxation peak heights show that with the increase of annealing temperature and BiFeO3 content, the PNR concentration increases while OV concentration decreases. Cole–Cole diagram analysis indicates that dielectric relaxations are likely based on changes in grain interior, grain boundary, and the increased electrode/ceramic interface as the doping content increases. The possible causes of relaxation behavior dependence are analyzed in detail.

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High-temperature relaxor ferroelectric behavior in Pr-dopedSrTiO3

Cited by 47 publications

References 37 publications

Onset of spontaneous electrostrictive strain below 520 K in Pr-dopedSrTiO3

Onset of spontaneous electrostrictive strain below 520 K in Pr-dopedSrTiO3

Disorder driven structural and dielectric properties of silicon substituted strontium titanate

Effect of BiFeO₃ Doping and Annealing Temperature on the High‐Temperature Dielectric Relaxation Properties in BaTiO₃–SrTiO₃ Lead‐Free Ceramics

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High-temperature relaxor ferroelectric behavior in Pr-dopedSrTiO3

Cited by 47 publications

References 37 publications

Onset of spontaneous electrostrictive strain below 520 K in Pr-dopedSrTiO3

Onset of spontaneous electrostrictive strain below 520 K in Pr-dopedSrTiO3

Disorder driven structural and dielectric properties of silicon substituted strontium titanate

Effect of BiFeO3 Doping and Annealing Temperature on the High‐Temperature Dielectric Relaxation Properties in BaTiO3–SrTiO3 Lead‐Free Ceramics

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Effect of BiFeO₃ Doping and Annealing Temperature on the High‐Temperature Dielectric Relaxation Properties in BaTiO₃–SrTiO₃ Lead‐Free Ceramics