High Temperature Properties of CdTe Crystals, Doped by Sb

Fochuk, P.; Grill, R.; Nykonyuk, Ye.; Krustok, J.; Armani, N.; Zakharuk, Z. I.; Grossberg, Michael; Panchuk, O.

doi:10.1109/tns.2007.902368

Cited by 8 publications

(2 citation statements)

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“…30−34 The deeper acceptor level at approximately 115 meV is also induced by Sb incorporation. 30 As we will soon see, both impurity levels correspond to the optical emission measurement.…”

Section: Nano Lettersmentioning

confidence: 78%

“…Therefore, the result identifies two acceptor levels at 56 ± 2 meV and 115 ± 4 meV above the valence band. The shallow level at 56 meV is induced by a substitutional Sb atom on a Te site (Sb Te ), which is expected to be located at 51–61 meV above the valence band. − The deeper acceptor level at approximately 115 meV is also induced by Sb incorporation . As we will soon see, both impurity levels correspond to the optical emission measurement.…”

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confidence: 80%

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Nature of AX Centers in Antimony-Doped Cadmium Telluride Nanobelts

et al. 2015

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Single crystalline p-type CdTe:Sb nanobelts were fabricated using an Au-catalyzed chemical vapor deposition method. Low carrier concentration and low mobility even at high Sb incorporation manifest compensation in the system. From cross examination of temperature-dependent charge transport and photoluminescence measurements, two major acceptor levels induced by Sb doping are determined: a shallow level attributed to substitutional Sb dopants without lattice relaxation and an associated deeper level resulted from large lattice relaxation-AX centers. Persistent photoconductivity and hysteresis photoconductance under the thermal cycle elucidate the nature of AX centers. This comprehensive investigation of the impurity levels in the material system is essential for the design and development of nanoelectronic devices based on the CdTe nanostructures.

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Section: Nano Lettersmentioning

confidence: 78%