High-temperature polymorphism in rare earth elements

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates

“…Here, a AlN and a SiC are 4.2 and 3.27 ( Â 10 À6 K À1 ), respectively [13,14]. By calculation of Eq.…”

The standard enthalpies of formation of binary intermetallic compounds of some late 4d and 5d transition metals by high temperature direct synthesis calorimetry

“…In Table 3 we compare our results with experimental measurements from the published literature [15][16][17] and with predicted values. We were rarely able to make comparison for the present work with calorimetric studies.…”

“…We found that thermochemical information for the systems we have studied is very scarce in the published literature. We found some G values on the basis of EMF measurements and by vapor pressure studies [15][16][17], but very few enthalpies of formation by calorimetry [18].…”

Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study

“…Although the differences in thermal expansion coefficient are not large -3.77 × 10 −6 K −1 for Si (α Si , average value for 300-900 K [14,15]) and 4.15 × 10 −6 K −1 for AlN (α AlN , 293-1073 K [16]), an increase in tensile stress for AlN on Si must occur during the cooling-down process. Additional threading dislocations may be generated at island-island junctions, as shown in the inserted image in Fig.…”