Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an inplane current has become feasible since the determination of a "giant" spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both theoretical and experimental reports indicate that the non-collinear and collinear metallic antiferromagnet (AF) materials can have both a large anomalous Hall effect (AHE) and a strong SHE. Here we report a systematic study of the SHE in PtMn with several PtMn/FM systems. By using interface engineering to reduce the "spin memory loss" we obtain, in the best instance, a spin torque efficiency , where T int is the effective interface spin transparency. This is more than twice the previously reported spin torque efficiency for PtMn. We also find that the apparent spin diffusion length in PtMn is surprisingly long, PtMn s 2.3nm . 2 SHE in different heavy metal (HM)/ferromagnet (FM) systems 1-4 can be characterized by the spin Hall ratio (angle)where J s is the transverse spin current density generated in the HM and J e is the applied longitudinal electrical current density. Recently a new class of heavy metal (HM) alloys, the non-collinear antiferromagnet (AF), Mn 3 Ir 5-7 and Cu-Au-I type AF, X 50 Mn 50 (X=Fe, Pd, Ir, and Pt) [8][9][10][11] have been reported to exhibit SHE as spin current sources, with an internal PtMn 0.125for PtMn 10 , opening up a new area in the rapidly advancing field of "antiferromagnet spintronics" [12][13][14][15][16][17] . To date research on the SHE from AFs has utilized the implicit assumption that there is no interfacial spin flip scattering or "spin memory loss" (SML) 18 when the spin current traverses the interface to apply a torque to the FM. However the existence of a large SML at some Pt/FM interfaces, together with the negative enthalpy of formation of Mn with both Fe and Ni 19 that can promote interface intermixing, raises the question whether there may also be a significant SML at PtMn/FM interfaces, which would mean that the internal q SH PtMn within PtMn could actually be much higher than previously reported.We performed a systematic study of the SHE in several PtMn/FM systems employing spin-torque ferromagnetic resonance (ST-FMR) 20 on in-plane magnetized (IPM) FM layers and the harmonic response technique (HR) 21,22 on FM layers with perpendicular magnetic anisotropy (PMA). We also studied samples where a thin (0.25 nm -0.8 nm) Hf layer is inserted between the PtMn and the FM to suppress strong SML at the interface 23 . We find DL to vary significantly with both the deposition order for a given PtMn/FM system and between the different FM systems, but to be relatively consistent between IPM and PMA samples with the same constituents. We also obtained robust current-induced switching in these PMA samples demonstrating the potential for utilizing PtMn in perpendicular magnetic tunneling junction (p-MTJ) and three-terminal device applications.