Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study

Kim, Young Heon; Lee, J. H.; Noh, Young-Kyun; Oh, Jae‐Eung; Ahn, Sang Jung

doi:10.1016/j.tsf.2015.01.008

Cited by 14 publications

(4 citation statements)

References 17 publications

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“…19,20 Unfortunately, the relatively large mismatch between Si and AlN in lattice constant and CTE (19% and 60% for AlN (0001)/Si (111) interface, respectively 1,12 ), and the high reactivity of Si with nitrogen 20,21 create significant interfacial engineering challenges. 22 Despite these challenges, AlN is also commonly utilized as a buffer or seed layer for the growth of GaN and III-N alloys on Si to prevent liquid Ga at the Si growth surface, facilitate elimination of threading dislocations, and enable growth of compressive GaN to counteract tensile stresses created by the large CTE mismatch between GaN and Si. 21,23 In addition to the above challenges, charge transport and carrier recombination at the AlN/Si interface are a significant consideration for the performance and reliability of AlN/Si and other III-N/Si heterostructure devices.…”

Section: Introductionmentioning

confidence: 99%

Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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Articles you may be interested inSmall valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689 Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fieldsDependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstructionTo advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050 C) and Al pre-exposures (1-15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be À3.5 6 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 6 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be À2.7 6 0.3 and À0.4 6 0.3 eV, respectively. V C 2015 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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“…In literature, many methods have been reported to deposit ZnO and AlN films including physical vapor deposition (PVD), such as sputtering, [54][55][56] evaporation, [57] pulsed laser deposition (PLD), [58,59] molecular beam epitaxy (MBE), [60,61] chemical vapor deposition (CVD). [62,63] Different deposition processes lead to different crystalline quality, temperature, costs, and rates of deposition.…”

Section: Processing Of Piezoelectric Materials For Polymeric Saw Devicesmentioning

confidence: 99%

Recent Progress in Polymeric Flexible Surface Acoustic Wave Devices: Materials, Processing, and Applications

Lamanna

2023

Adv Materials Technologies

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Recently, there has been a remarkable increase in interest in piezoelectric thin films, particularly zinc oxide (ZnO) and aluminum nitride (AlN), deposited on flexible polymeric substrates. This is due to the rapid expansion of fields such as robotics, wearable devices, and the Internet of Things (IoT). These thin‐film layered structures have a wide range of applications, such as energy harvesting, sensing and biosensing, microfluidic sorting, pumping and mixing, and telecommunications. One of the most promising platforms is piezoelectric acoustic‐based thin‐film devices on inexpensive, recyclable, or disposable polymeric substrates. Their reliability, reproducibility, conformability, small size, and wireless control capabilities make them a leading candidate for the development of new wireless, fully automated, and digitized microsystems for IoT and wearable devices. This review examines recent advancements in the engineering of ZnO and AlN thin films on polymeric, flexible, and conformable surface acoustic wave (SAW) devices. Topics covered include the materials used, piezoelectric film deposition, device fabrication, and the latest applications of this technology as sensors and actuators.

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“…In addition, nitride-on-silicon structures afford the possibility of an excellent candidates for unique design architectures and for creating devices for high-power applications. Therefore, much effort has been concentrated on the growth of AlN and GaN layers on Si substrates [5][6][7].For the epitaxial growth of nitride thin films, a Si (110) wafer has begun to attract attention as a substrate, due to its interesting interface structure [5,8,9]. When nitrides are grown on a Si (110) substrate, the orientation relationship between the GaN and AlN and the Si is The main purpose of this study was to understand microstructural properties, such as the atomic structure, dislocation distribution, and strain behaviors, of GaN/AlN structures grown on Si (110) substrates.…”

mentioning

confidence: 99%

“…For the epitaxial growth of nitride thin films, a Si (110) wafer has begun to attract attention as a substrate, due to its interesting interface structure [5,8,9]. When nitrides are grown on a Si (110) substrate, the orientation relationship between the GaN and AlN and the Si is The main purpose of this study was to understand microstructural properties, such as the atomic structure, dislocation distribution, and strain behaviors, of GaN/AlN structures grown on Si (110) substrates.…”

mentioning

confidence: 99%

Microstructural characteristics of GaN/AlN thin films grown on a Si (110) substrate by molecular beam epitaxy: Transmission electron microscopy study

Kim¹,

Lee²,

Ahn³

et al. 2016

Microsc Microanal

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The growth of III-nitride thin films with a high quality including few defects is essentially required for many applications, such as optical devices, high frequency devices, and high power devices [1,2]. The III-nitride compound semiconductors are a tetrahedrally coordinated binary compounds, found in either cubic zinc-blende (ZB) or hexagonal wurtzite (WZ) structures [3]. The two structures, ZB and WZ, differ in the relative handedness of the fourth interatomic bond along the (111) chain. The layer stacking sequence for WZ is ABABABA…, and that of ZB is ABCABCA…, along (111), respectively [3,4]. The epitaxial growth of AlN and GaN thin films on silicon (Si) substrates is very attractive, as it has several advantages, such as high quality and large area, compared with compound substrates. In addition, nitride-on-silicon structures afford the possibility of an excellent candidates for unique design architectures and for creating devices for high-power applications. Therefore, much effort has been concentrated on the growth of AlN and GaN layers on Si substrates [5][6][7].For the epitaxial growth of nitride thin films, a Si (110) wafer has begun to attract attention as a substrate, due to its interesting interface structure [5,8,9]. When nitrides are grown on a Si (110) substrate, the orientation relationship between the GaN and AlN and the Si is The main purpose of this study was to understand microstructural properties, such as the atomic structure, dislocation distribution, and strain behaviors, of GaN/AlN structures grown on Si (110) substrates. The microstructural properties of the GaN/AlN structures were studied in detail using TEM. Specifically, the interface structures between the GaN, AlN and the substrate and the dislocation behavior at the interfaces were detailedly studied using bright-field and dark-field (BF and DF) TEM images taken under two-beam conditions and HRTEM micrographs. In order to study the strain behavior at the interface, geometrical phase analysis (GPA) was conducted using the GPA for Gatan DigitalMicrograph program from HREM Research Inc.The schematic diagram of GaN/AlN/Si (110) structures was shown in Fig. 1(a). The analysis of the SAED patterns in Fig. 1(b) indicates that the orientation relationship between the WZ structure of the AlN and the Si (110) _ 20] zone axis around a tilting axis perpendicular to the growth surface. By applying the invisibility criterion, g⋅b=0, where g is a diffraction vector and b is a dislocation Burgers vector, it is likely that the dislocations in Figs. 2(a) 1576

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Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study

Cited by 14 publications

References 17 publications

Band alignment at AlN/Si (111) and (001) interfaces

Band alignment at AlN/Si (111) and (001) interfaces

Recent Progress in Polymeric Flexible Surface Acoustic Wave Devices: Materials, Processing, and Applications

Microstructural characteristics of GaN/AlN thin films grown on a Si (110) substrate by molecular beam epitaxy: Transmission electron microscopy study

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