High-temperature operation of 1.26 [micro sign]m Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate

Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations

“…Currently, at most three to five wells are the experimental limitation for the growth of highly strained QWs with strain larger than 2%. 8,10,21 Furthermore, by using AlGaInAs barriers, T 0 of GaInNAs QWs is increased and comparable to that of GaInAs QWs while the strain value is kept small. T 0 of over 140 K is possible for GaInNAs/ AlGaInAs QWs with the strain around 2% by using low-In-content GanAs substrates, which are easier to fabricate.…”

“…The other approach is to grow QW lasers on GaInAs or quasi-GaInAs substrates. [5][6][7][8][9][10] The larger the In content of the substrate ͑x sub ͒ is, the smaller the strain of the well layer becomes. Recently, we fabricated GaInAs/ GaInAs QW lasers on low-In-content GaInAs ͑x sub = 0.1͒ substrates with the operating wavelength of 1.28 m and the characteristic temperature T 0 of 130 K, 8 although large strain ͑ Ͼ 2%͒ was still required in the well layer.…”

Uncooled (25–85°C) 10 Gbit/s operation of 1.3 [micro sign]m-range metamorphic Fabry-Perot laser on GaAs substrate

“…1.3 mm-range emissions from metamorphic InGaAs lasers have been reported [1][2][3]. In our previous study, we successfully formed a very flat and well-relaxed InGaAs layer on a GaAs substrate by using an abrupt InGaAs buffer instead of a graded buffer, and realised a laser with good static characteristics [4].In this work, we constructed a high performance short cavity FabryPerot laser with a metamorphic buffer. A highly strained InGaAsInGaAs MQW on a low indium content InGaAs buffer enables us to realise 1.3 mm-range lasing and low threshold current operation.…”

“…1.3 mm-range emissions from metamorphic InGaAs lasers have been reported [1][2][3]. In our previous study, we successfully formed a very flat and well-relaxed InGaAs layer on a GaAs substrate by using an abrupt InGaAs buffer instead of a graded buffer, and realised a laser with good static characteristics [4].…”

“…However, a very thick layer is needed for complete relaxation. We used an abrupt In 0.12 Ga 0.88 As buffer layer to obtain a fully relaxed In 0.1 Ga 0.9 As layer [4]. Fig.…”