Low-Temperature and Metamorphic Buffer Layers

Ayers, J. E.

doi:10.1016/b978-0-444-63304-0.00025-1

Cited by 4 publications

(5 citation statements)

References 167 publications

(316 reference statements)

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“…The structure is widely adopted (Fig. 1), 4) with different doping atoms and concentrations (Table I).…”

Section: Experimental Methodsmentioning

confidence: 99%

“…3) Compositionally graded buffers (CGBs) are the most commonly used metamorphic buffers which can produce highly relaxed buffers with smooth surfaces and minimize the threading dislocation density (TDD) through a nucleationlimited mechanism. 4) Many different materials, such as InGaAs, InAlAs, InGaP, GaAsP, GaAsSb, AlGaInAs, AlGaInP, InGaAsP and AlGaAsSb, have been used as metamorphic buffer layers. Yonenaga noted that dislocations migrate faster in III-As than in III-P crystals.…”

Section: Introductionmentioning

confidence: 99%

“…8,9) Doping atoms such as Zn, Be and Si has been suggested to greatly impact epitaxial surface defects in metamorphic buffer layers, but their detailed effects have not been completely understood. 4,[10][11][12] In this paper, the effects of doping Zn and Si atoms on epitaxial surface defects in AlGaInAs CGBs by MOCVD are studied.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD

Zhang

Zimin

Liu³

et al. 2020

Jpn. J. Appl. Phys.

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The influence of Zn and Si atoms on AlGaInAs compositionally graded buffers (CGBs) was studied using the approaches of optical microscopy, reciprocal space mapping, Raman spectroscopy and cathodoluminescence imaging. CGBs with Zn or Si doping could achieve good relaxation of about 90%, while Si but not Zn doping significantly impacted the tilt angle. Ribbon-like scratches along the 〈1–10〉 direction were observed in samples with Si doping. Sharp increases in threading dislocation density (TDD) and dislocation pile-up were observed along the scratches. In contrast, CGBs with Zn doping featured smooth surfaces and lower TDDs, contributing to improved chip performance. Based on these results, we conclude that Si atoms decrease the glide length of misfit dislocation segments and cause dislocation nucleation multiplication and dislocation pile-up and eventually increase surface roughness and TDD, while Zn could serve as a surface surfactant medium.

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“…The structure is widely adopted (Fig. 1), 4) with different doping atoms and concentrations (Table I).…”

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD

Zhang

Zimin

Liu³

et al. 2020

Jpn. J. Appl. Phys.

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“…The realization of semiconductor devices on a lattice-mismatched substrate is typically achieved by metamorphic (partly-relaxed) growth (1)(2)(3)(4)(5)(6), which is accompanied by elastic strains and threading dislocation defects (7). Compositionally-graded buffer layers are commonly employed to accommodate the lattice mismatch (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26), with the goal of reducing the density of threading dislocations and, in some cases, with the added goal of controlling the residual strain.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Nonlinear Grading Approaches for ZnSSe/GaAs (001) Heterostructrures

Ayers¹,

Kujofsa²

2020

ECS Trans.

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Compositional grading is commonly used to accommodate the lattice mismatch in metamorphic semiconductor device structures. Although linearly-graded or linear step-graded approaches are commonly used, there are experimental and theoretical grounds for the expectation that nonlinearly-graded buffer layers could offer advantages in the control of dislocations or strain. In this work we have conducted a detailed modeling study of nonlinearly-graded buffer layers in ZnSSe/GaAs (001) heterostructures to better understand the dislocation dynamics and defect behavior in such nonlinear buffers, and we make comparisons to the well-known case of linear grading.

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“…A drawback of metamorphic growth is the inherent incorporation of misfit dislocations and their associated threading defects, which can degrade device performance. It is possible to minimize these effects by using a suitable buffer layer grown between the device and its mismatched substrate, and the linearly-graded buffer has been the most-studied approach (6)(7)(8)(9)(10)(11)(12)(13). On the other hand, superlattices have been used either alone (14)(15)(16)(17) or in conjunction with graded layers (18) to filter threading dislocations.…”

Section: Introductionmentioning

confidence: 99%

Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices

et al. 2017

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Chirped superlattices are of interest as buffer layers in metamorphic semiconductor device structures, because they can combine the mismatch accommodating properties of compositionally-graded layers with the dislocation filtering properties of superlattices. Important practical aspects of the chirped superlattice as a buffer layer are the surface strain and surface in-plane lattice constant. In this work we studied two basic types of InGaAs/GaAs chirped superlattice buffers; type I is compositionally modulated while type II is thicknesses modulated. For both types, we have investigated the equilibrium surface strain and surface in-plane lattice constant, and have compared the behavior to linearly-graded buffers having the same top target composition of indium.

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Low-Temperature and Metamorphic Buffer Layers

Cited by 4 publications

References 167 publications

Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD

Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD

Comparison of Nonlinear Grading Approaches for ZnSSe/GaAs (001) Heterostructrures

Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices

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