High‐Temperature Microsensors

Gerblinger, J.; Haerdtl, K. H.; Meixner, H.; Aigner, Robert

doi:10.1002/9783527619269.ch6g

Cited by 16 publications

(14 citation statements)

References 49 publications

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“…There are already many excellent review articles on this topic in which readers can obtain a complete picture of chemoresistive gas sensors research from various perspectives [8][9][10][11][12][13][14][15][16][17][18][19]. In this brief review, a chronological approach is taken in order to not only examine the past, but also to identify key concepts, new materials and technologies, as well as predict innovative ideas for the future.…”

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confidence: 99%

First Fifty Years of Chemoresistive Gas Sensors

2015

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Abstract:The first fifty years of chemoresistive sensors for gas detection are here reviewed, focusing on the main scientific and technological innovations that have occurred in the field over the course of these years. A look at advances made in fundamental and applied research and leading to the development of actual high performance chemoresistive devices is presented. The approaches devoted to the synthesis of novel semiconducting materials with unprecedented nanostructure and gas-sensing properties have been also presented. Perspectives on new technologies and future applications of chemoresistive gas sensors have also been highlighted.

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confidence: 99%

First Fifty Years of Chemoresistive Gas Sensors

2015

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“…SrTi03 is a promising material for resistive high temperature (T > 700 °C) oxygen sensors [9,[34][35][36]. All of the reported studies on SrTi03 indicate that for both the polycrystalline and single-crystal state SrTiCh, in the P02 range near 1 atm, when the oxygen partial pressure changes from low to high, there is a transition from n-type conduction at low P02 to p-type conduction at high P02 in SrTi03 [38].…”

Section: Semiconductor Oxygen Sensors and Sensing Mechanismsmentioning

confidence: 99%

“…Most research work focuses on bulk conduction type in SrTi0 3 with high operating temperatures (700-1000 °C) [5,[8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The sensing material is produced by the conventional high temperature solid-state reaction method because of its high melting point (2080 °C) [16, 34-35, 39, 101, 104].…”

Section: Problems Faced In Srtio Researchmentioning

confidence: 99%

“…[V 0 (ii) X ] in the high Po 2 (Po 2 > 10" 4 atm) is very small and its change can be omitted [62]. Hence, log o °= 1/4 log P 02 (4.6) In the P02 range of 1-5 atm, the commercial nano-sized SrTi03 material shifts to the ntype and has -1/3.8 (near -1/4) slope gradient in curve of the log a to log P02 (figure [5][6][7][8][9][10][11][12][13][14][15][16][17]. In this higher P02 range, the intrinsic acceptors strontium vacancies are created in oxygen-rich atmospheres [39].…”

Section: The DC I-v Relationmentioning

confidence: 99%

“…The low cost and the stability of the perovskite structure in thermal (up to 1200 °C) and chemical atmospheres [8] allow for possible adjustment of the electronic properties by dopants and maintenance of stable property as the grain size decreases to nano-scale. Up to now, most research work in SrTi0 3 focuses on bulk conduction type [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22], or grain-boundary control, with high operating temperatures (700-1000 °C) [5]. In order to decrease the operating temperature of SrTiCh oxygen sensors, the nano-sized materials for the surface conduction type must be obtained.…”

Section: Introduction 11 Motivationmentioning

confidence: 99%

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Nano-sized strontium titanate metal oxide semiconductor oxygen gas sensors

Hu¹

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I'm extremely grateful to my supervisor A/Prof. Tan Ooi Kiang for suggesting me this interesting area, and his invaluable guidance, efficient planning, constructive criticism during the whole period of my research work. His foresight and methodology have given me a very rewarding and lasting experience in the whole course of the work. I'm greatly indebted to my co-supervisor Dr. Pan Jisheng for his inspiration and guidance. I would also thank Prof. Zhu Weiguang for his useful suggestions and encouragements. I express my sincere gratitude to Prof. Yao Xi for his guidance and comments. I also would like to express my thanks to A/Prof. Chen Tupei, A/Prof. Sun Chang Qing and A/Prof. Timothy John White for their guidance and discussion.

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Kinetics of Oxygen Incorporation into SrTiO3 Investigated by Frequency-Domain Analysis

et al. 2004

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The kinetics of oxygen incorporation are of fundamental importance for an application of acceptor doped strontium titanate as a resistive-type oxygen sensor. The electrical conductance of the sample depends on the ambient oxygen partial pressure pO 2 due to oxygen exchange between gas phase and solid state which leads to a flow of charge carriers. The kinetics of the incorporation process can be separated into two steps: the oxygen surface transfer and the subsequent bulk diffusion of oxygen vacancies. The rate of the slower step determines the kinetics of the overall incorporation process and thus the sensor's response behavior.A method for the investigation of the kinetic behavior is presented which is based on a frequency-domain analysis. In the underlying model, a SrTiO 3 single crystal is exposed to a harmonically modulated pO 2 . This leads to a modulation of the sample's electrical conductance. By way of calculation, it is shown that the shape of the frequency response clearly allows to distinguish whether the kinetics of oxygen incorporation are determined either by bulk diffusion or by surface transfer.The experimental validation of this model is demonstrated by investigations performed on slightly acceptor doped SrTiO 3 single crystals of various thicknesses in a kinetic measurement setup at different temperatures.

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High‐Temperature Microsensors

Cited by 16 publications

References 49 publications

First Fifty Years of Chemoresistive Gas Sensors

First Fifty Years of Chemoresistive Gas Sensors

Nano-sized strontium titanate metal oxide semiconductor oxygen gas sensors

Kinetics of Oxygen Incorporation into SrTiO3 Investigated by Frequency-Domain Analysis

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