High-temperature growth of very high germanium content SiGe virtual substrates

Bogumilowicz, Y.; Hartmann, Jean‐Michel; Nardo, C. Di; Holliger, P.; Papon, Anne‐Marie; Rolland, G.; Billon, T.

doi:10.1016/j.jcrysgro.2006.02.019

Cited by 37 publications

(34 citation statements)

References 31 publications

(36 reference statements)

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“…SiGe(1 0 0) VS are thus fully relaxed or in a very slight tensile-strained configuration. R (1 0 0) values obtained here are also very close to the ones previously found [27]. SiGe(11 0) VS are also nearly fully relaxed with relaxation ratios R perp (11 0) in the 95-98% range (cf.…”

Section: Xrd Diffraction Analysis Of the As-grown Sige Virtual Substrsupporting

confidence: 89%

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Destefanis

Hartmann

Abbadie

et al. 2009

Journal of Crystal Growth

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Section: Xrd Diffraction Analysis Of the As-grown Sige Virtual Substrsupporting

confidence: 89%

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Destefanis

Hartmann

Abbadie

et al. 2009

Journal of Crystal Growth

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“…Their structural properties have been discussed as a function of the growth temperature, the grading rate, the SiGe growth rate and the final Ge concentration [18][19]. We have quite recently extended those findings by studying the growth kinetics of SiGe and the structural properties of SiGe virtual substrates in the 50% to 100% range [20]. Westhoff et al had shown in 2004 that using very high growth temperatures (i.e.…”

Section: Introductionmentioning

confidence: 91%

Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%)

Hartmann¹,

Baud²,

Rolland³

et al. 2006

ECS Trans.

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We have studied at 20 Torr the very high temperature (i.e. 850°C to 1100°C) growth kinetics of SiGe in Reduced PressureChemical Vapour Deposition. The growth chemistry adopted was heavily chlorinated, i.e. SiH 2 Cl 2 + GeH 4 + HCl, in order to avoid any significant chamber quartz wall coating (and thus flaking) during the deposition of thick layers. We are mostly in a high temperature, supply-limited regime, with a small increase of the SiGe growth rate as the GeH 4 mass-flow and/or the growth temperature increases. By contrast, the Ge concentration decreases for given precursor mass-flows as the growth temperature increases. Its dependence on the F(GeH 4 ) / F(SiH 2 Cl 2 ) + F(GeH 4 ) mass-flow ratio, almost linear at 850°C and 900°C, gets parabolic for higher growth temperatures. We have used those data points to grow linearly graded (~ 9%Ge / µm) SiGe Virtual Substrates (VS) with final Ge concentrations in the 15% to 45% range. The growth temperature was gradually decreased as the Ge concentration increased, in order to obtain long misfit dislocations' segments (high glide velocity) and thus potentially lower Threading Dislocations Densities (TDDs), while keeping the surface as flat as possible. The macroscopic degree of strain relaxation of the constant composition SiGe layers on top of our VS increases as the Ge concentration increases : from 96.2% ([Ge] = 16%) up to 99.5% ([Ge] = 46%). The surface of those SiGe VS is as expected cross-hatched (undulations running along the <110> directions, with a spatial wavelength in the 2 to 3 µm range). Because of the higher surface roughness inherent to those high growth temperatures, we did not obtain the strong TDD reduction that might have been expected. We indeed ended up with TDD in the 1.5 to 2x10 5 cm -2 , i.e. values barely inferior to the ones achieved at 900°C for such a grade. Almost no dislocation pile-ups were observed, however. .

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“…SiGe virtual substrates graded all the way up to pure Ge yield low threading dislocations densities ( $ 10 6 cm À 2 ), fully relaxed but rough (i.e. cross-hatched) Ge layers on top [14][15][16]. Chemical mechanical polishing is then mandatory to recover smooth surfaces.…”

Section: Introductionmentioning

confidence: 99%