High temperature Ga2O3-gas sensors and SnO2-gas sensors: a comparison

Hoefer, Ulrich; Frank, J.; Fleischer, Maximilian

doi:10.1016/s0925-4005(01)00784-5

Cited by 158 publications

(102 citation statements)

References 3 publications

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“…There is also no necessity of degassing cycles in contrary to SnO 2 sensors. Disadvantages are lower sensitivity and higher power consumption due to high temperature operation (Hoefer et al, 2001). Fig.…”

Section: Gas Sensorsmentioning

confidence: 99%

“…Sensing mechanism is assumed to be based on charge carrier exchange of adsorbed gas with the surface of the sensing layer. Resistance modulation is a consequence of the change of free charge carrier concentration resulted from the alteration of acceptor concentration on the surface raising from the reaction of molecules with adsorbed oxygen ions when exposed to oxygen containing ambient (Hoefer et al, 2001). Generally adsorbed reducing or oxidizing gas species inject electrons into or extract electrons from semiconducting material (Li et al, 2003) thus changing material conductivity.…”

Section: Gas Sensorsmentioning

confidence: 99%

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Wet Thermal Oxidation of GaAs and GaN

Korbutowicz¹,

Prazmowska²

2010

Semiconductor Technologies

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Section: Gas Sensorsmentioning

confidence: 99%

Section: Gas Sensorsmentioning

confidence: 99%

Wet Thermal Oxidation of GaAs and GaN

Korbutowicz¹,

Prazmowska²

2010

Semiconductor Technologies

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“…The wide-band-gap semiconductor gallium oxide has a multitude of potential applications in spintronics [1], sensorics [2], solar-blind detectors [3], and transparent electronics [4,5]. It has long been known that Ga 2 O 3 crystallizes in several different polytypes [6], each with distinct physical properties.…”

Section: Introductionmentioning

confidence: 99%

Ordinary dielectric function of corundumlike α−Ga2O3 from 40 meV to 20 eV

Feneberg

Nixdorf

Neumann

et al. 2018

Phys. Rev. Materials

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The linear optical response of metastable α-Ga 2 O 3 is investigated by spectroscopic ellipsometry. We determine the ordinary dielectric function from lattice vibrations up to the vacuum ultraviolet spectral range at room temperature for a sample with a (0001) surface. Three out of four E u infrared-active phonon modes are unambiguously determined, and their frequencies are in good agreement with density functional theory calculations. The dispersion of the refractive index in the visible and ultraviolet part of the spectrum is determined. High-energy interband transitions are characterized up to 20 eV. By comparison with the optical response of α-Al 2 O 3 and with theoretical results, a tentative assignment of interband transitions is proposed.

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“…Gallium oxide is a wide-band-gap semiconductor with important applications in transparent conductive oxides, 1 deep ultraviolet solar-blind detectors, 2,3 spintronics, 4 high temperature gas sensors, 5 and novel functional oxides. 6 The monoclinic b-phase is thermodynamically the most stable phase at ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal

Cuscó

Domènech-Amador

Hatakeyama

et al. 2015

Journal of Applied Physics

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The lattice dynamical properties of the corundum-like a-phase of Ga 2 O 3 are investigated by means of Raman scattering experiments and ab-initio calculations. A high-quality, single-crystal thick epilayer was grown on sapphire by the mist-chemical vapor deposition method. The phonon frequencies at the Brillouin zone center of all the Raman-active modes are determined by polarized Raman scattering measurements on an a-Ga 2 O 3 single crystal. By performing backscattering measurements from (0001) and ð10 10Þ faces, all Raman active modes are unambiguously identified. Density functional perturbation theory calculations were carried out to determine the symmetry and the frequency of the a-Ga 2 O 3 lattice modes. We find a good agreement between the theoretical predictions and the Raman spectra. The relative intensity of the different modes and their polarizability are discussed. The Raman spectrum is dominated by a narrow A 1g peak which indicates the high crystalline quality of the layers grown by the mist chemical vapor deposition method. V C 2015 AIP Publishing LLC. [http://dx

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High temperature Ga2O3-gas sensors and SnO2-gas sensors: a comparison

Cited by 158 publications

References 3 publications

Wet Thermal Oxidation of GaAs and GaN

Wet Thermal Oxidation of GaAs and GaN

Ordinary dielectric function of corundumlike α−Ga2O3 from 40 meV to 20 eV

Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal

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