Abstract:High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe : In and of CdSe : In are compared. There are differencies in In-doping mechanisms of II -VI compounds. When HTEC isotherms and isobars of ZnSe : In and of CdSe : In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (
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