Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films

Isik, M.; Güllü, H. H.; Delice, S.; Gasanly, Nizami; Parlak, M.

doi:10.1007/s10854-019-01265-5

J Mater Sci: Mater Electron

2019

DOI: 10.1007/s10854-019-01265-5

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Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films

M. Isik

H. H. Güllü

S. Delice

et al.

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Cited by 2 publications

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“…To improve their optoelectrical characteristics, such as resistivity, wide-gap polycrystalline materials are often doped with group III elements [9,10]. The incorporation of indium (In) into zinc selenide (ZnSe) thin films enhances conductivity and absorption coefficients, rendering these films highly effective for photodetector applications [11]. These Zn-In-Se thin films, part of the II-III-VI semiconductor group, exhibit polycrystalline structure and n-type conductivity [12].…”

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Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Aamer,

Rafiq,

Hayat

et al. 2024

Int J of Quantum Chemistry

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This study investigates the alterations in structural, electronic, and optical characteristics of ZnSe1−x Inx (x = 0%, 12.5%, 25%) employing the framework of density functional theory (DFT), utilizing generalized gradient approximation (GGA) in conjunction with the full‐potential linearized augmented plane wave (FP‐LAPW) approach. The findings reveal that pure ZnSe exhibits a direct bandgap of 1.79 eV at the Γ point, which reduces to 0 eV upon doping with Indium, indicating a transition to metallic characteristics. This change is attributed to the predominant involvement of the d‐orbital of Zn, s‐orbital of Se, and p‐orbitals of Indium in the valence band of ZnSe1−x Inx materials. Conversely, the s‐orbital of Zn predominantly contributes to the conduction band of undoped ZnSe, whereas the d‐orbitals of Indium play a significant role in the conduction band of ZnSe1−x Inx (x = 0%, 12.5%, 25%). Moreover, the study computes other optical parameters, including reflectivity, electron energy loss spectrum, extinction coefficient, refractive index, and absorption coefficient, as functions of photon energy. A notable observation is the considerable rise in the zero‐frequency dielectric constant, ε1(0), which increases from 5.0 in pure ZnSe to 40.0 and 50.0 in Indium‐doped ZnSe, highlighting a significant alteration in electronic properties. Furthermore, optical analyses demonstrate an expansion in the absorption coefficient spectrum, which extends from photon energies of 2.0 eV in pristine ZnSe to begin at 0 eV in Indium‐doped variants, indicating a broadening of the material's capacity to absorb light across a wider spectrum of photon energies. This expansion infers improved light absorption potential, which could be particularly beneficial for the fabrication of light‐emitting modules and solar energy converters. These insights underline the considerable influence that Indium incorporation exerts on the band architecture and optical responses of ZnSe, offering critical directions for the advancement of optoelectronic devices.

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confidence: 99%

Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Aamer,

Rafiq,

Hayat

et al. 2024

Int J of Quantum Chemistry

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Effect of indium doping on the optoelectronic properties of ZnSe films

Moger

Mahesha²

2022

Thin Solid Films

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Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films

Cited by 2 publications

References 39 publications

Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Effect of indium doping on the optoelectronic properties of ZnSe films

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