Investigations of thermal annealing role on the optical properties of Zn-In-Se thin films

Güllü, H. H.; Coşkun, Emre; Parlak, M.

doi:10.1016/j.ijleo.2017.06.106

Cited by 8 publications

(1 citation statement)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The incorporation of indium (In) into zinc selenide (ZnSe) thin films enhances conductivity and absorption coefficients, rendering these films highly effective for photodetector applications [11]. These Zn‐In‐Se thin films, part of the II‐III‐VI semiconductor group, exhibit polycrystalline structure and n‐type conductivity [12].…”

Section: Introductionmentioning

confidence: 99%

Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Aamer,

Rafiq,

Hayat

et al. 2024

Int J of Quantum Chemistry

View full text Add to dashboard Cite

This study investigates the alterations in structural, electronic, and optical characteristics of ZnSe1−x Inx (x = 0%, 12.5%, 25%) employing the framework of density functional theory (DFT), utilizing generalized gradient approximation (GGA) in conjunction with the full‐potential linearized augmented plane wave (FP‐LAPW) approach. The findings reveal that pure ZnSe exhibits a direct bandgap of 1.79 eV at the Γ point, which reduces to 0 eV upon doping with Indium, indicating a transition to metallic characteristics. This change is attributed to the predominant involvement of the d‐orbital of Zn, s‐orbital of Se, and p‐orbitals of Indium in the valence band of ZnSe1−x Inx materials. Conversely, the s‐orbital of Zn predominantly contributes to the conduction band of undoped ZnSe, whereas the d‐orbitals of Indium play a significant role in the conduction band of ZnSe1−x Inx (x = 0%, 12.5%, 25%). Moreover, the study computes other optical parameters, including reflectivity, electron energy loss spectrum, extinction coefficient, refractive index, and absorption coefficient, as functions of photon energy. A notable observation is the considerable rise in the zero‐frequency dielectric constant, ε1(0), which increases from 5.0 in pure ZnSe to 40.0 and 50.0 in Indium‐doped ZnSe, highlighting a significant alteration in electronic properties. Furthermore, optical analyses demonstrate an expansion in the absorption coefficient spectrum, which extends from photon energies of 2.0 eV in pristine ZnSe to begin at 0 eV in Indium‐doped variants, indicating a broadening of the material's capacity to absorb light across a wider spectrum of photon energies. This expansion infers improved light absorption potential, which could be particularly beneficial for the fabrication of light‐emitting modules and solar energy converters. These insights underline the considerable influence that Indium incorporation exerts on the band architecture and optical responses of ZnSe, offering critical directions for the advancement of optoelectronic devices.

show abstract

Section: Introductionmentioning

confidence: 99%