High Temperature Behaviors of 1–2.5 μm Extended Wavelength In₀.₈₃Ga₀.₁₇As Photodetectors on InP Substrate

Liu, Yage; Ma, Yingjie; Xue, L.; Yuan, Gu; Li, Tao; Wan, Luhong; Shao, Xin; Gong, Haimei

doi:10.1109/jqe.2021.3087324

Cited by 6 publications

(4 citation statements)

References 26 publications

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“…This is partially because the smaller wavenumbers are more vulnerable to detector response variations due to thermal fluctuations, since the detector has a large slope around 3850 cm -1 , and thermal fluctuations cause this slope to shift around this value changing the PSD value. 29 To isolate the effects of drift and noise, the data are fitted to a custom equation that captures most of its variation. The fitting equation depends on the wavenumber.…”

Section: Resultsmentioning

confidence: 99%

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Allan Variance Characterization of Compact Fourier Transform Infrared Spectrometers

2023

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Handheld Fourier transform infrared (FT-IR) spectrometers are very promising candidates for several applications where accurate real-time material detection and quantification are needed. Due to their compact size, their mode of operation which does not allow for long warm-up time, and changing environmental conditions, these spectrometers suffer from short-term noise and long-term instabilities which affect their performance. In this work, the effect of long-term multiplicative instabilities on the signal-to-noise ratio (S/N), measured using the 100% line-method, is studied. An expression for the variance, in this case, is deduced. The Allan variance technique is used to identify and quantify the presence of the different types of noises. The methodology is applied to a commercial NeoSpectra scanner module from Si-Ware Systems, Inc.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Allan Variance Characterization of Compact Fourier Transform Infrared Spectrometers

2023

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“…Otherwise, the spectra response range is the primary parameter for SWIR photodetection, which always requires a narrow bandgap and wide spectra adsorption [11][12][13][14][15][16]. Hence, high mobility, high quality, and wide spectra response are key factors for the next generation of SWIR photodetectors with high temperature tolerance [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

et al. 2022

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A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.

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“…Utilizing commercial InGaAs material to operate in the 1.7-μm to 2-μm wavelength band poses very challenging issues which are exacerbated for wavelengths longer than 2 μm because state-of-the-art strained InGaAs devices, when compared to their lattice-matched (to InP) counterparts with a cut-off wavelength of 1.7 μm, suffer from high defect densities, lower detectivity and higher dark currents, and thus need cryogenic cooling to improve performance. [15][16][17][18] Furthermore, a severe reduction of QE in extended InGaAs is observed that has been attributed to the relatively large band offsets present in heterojunction architectures that are usually employed to reduce Shockley-Read-Hall (SRH) junction dark current. [19][20][21][22] While HgCdTe SWIR photodetectors have shown remarkable performance levels, the reported devices appear to be based on MWIR device designs in which the absorber composition has been tailored to the desired SWIR cut-off wavelength.…”

Section: Introductionmentioning

confidence: 99%

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Akhavan

Umana‐Membreno

et al. 2022

J. Electron. Mater.

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In this paper, we study the limiting mechanisms and design criteria of HgCdTe photodetectors for extended shortwave infrared applications with ultra-high quantum efficiency (QE) in both n-on-p and p-on-n technologies. Numerical and analytical models are employed in order to study the possibility of achieving ultra-high QE eSWIR detectors for the operational wavelengths of approximately 2.0 μm, and our study shows that by proper design of absorber layer and doping density, such a detector can be engineered. Furthermore, we demonstrate that the Shockley–Read–Hall (SRH) lifetime, absorber layer doping density and absorber layer thickness all have an impact on the quantum efficiency whether the detector is used as a small-area pixel element in a focal plane array or as a discrete large-area detector for sensing applications.

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High Temperature Behaviors of 1–2.5 μm Extended Wavelength In₀.₈₃Ga₀.₁₇As Photodetectors on InP Substrate

Cited by 6 publications

References 26 publications

Allan Variance Characterization of Compact Fourier Transform Infrared Spectrometers

Allan Variance Characterization of Compact Fourier Transform Infrared Spectrometers

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

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