Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

Abstract

A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.

Type-I Heterostructure Based on WS2/PtS2 for High-Performance Photodetectors

“…35,36 The D* of the WS 2 /PtS 2 heterostructure photodetector is equivalent to that of most heterostructure photodetectors, 59,61 and is significantly better than PtS 2 or WS 2 flake layer photodetectors. 62,63 This is due to the lower dark current of the WS 2 /PtS 2 heterostructure devices. The response time of the heterostructure photodetector is significantly faster than that of PtS 2 or WS 2 flake layer photodetectors, 62,63 and has advantages over some heterostructure photodetectors.…”

“…62,63 This is due to the lower dark current of the WS 2 /PtS 2 heterostructure devices. The response time of the heterostructure photodetector is significantly faster than that of PtS 2 or WS 2 flake layer photodetectors, 62,63 and has advantages over some heterostructure photodetectors. 35,52,61−63 In addition, we found that the photocurrent related to the incident power intensity can be fitted by I ph ∝ P α , 64 where P is the incident power intensity, α determines the response of the photocurrent to the incident power intensity.…”

“…Table shows that the EQE of the WS 2 /PtS 2 heterostructure is higher than that of most heterostructures. ,, This is due to the rapid recombination of photogenerated carriers in narrow-band gap semiconductors, which inhibits the recombination of photogenerated electron–hole pairs at the interface. , The D * of the WS 2 /PtS 2 heterostructure photodetector is equivalent to that of most heterostructure photodetectors, , and is significantly better than PtS 2 or WS 2 flake layer photodetectors. , This is due to the lower dark current of the WS 2 /PtS 2 heterostructure devices. The response time of the heterostructure photodetector is significantly faster than that of PtS 2 or WS 2 flake layer photodetectors, , and has advantages over some heterostructure photodetectors. ,,− In addition, we found that the photocurrent related to the incident power intensity can be fitted by I ph ∝ P α , where P is the incident power intensity, α determines the response of the photocurrent to the incident power intensity. The deviation between α and 1 indicates the loss of photon excited carriers, which indicates that there are some trap states at the interface of the heterostructure .…”

Advances in Flexible Organic Photodetectors: Materials and Applications

“…Two-dimensional materials and their three-dimensional derivatives show extraordinary optoelectronic and photodetection properties [ 145 , 146 , 147 ]. On the other hand, due to their stiffness and instability under air exposure, they need to hybridize with other soft semiconductor material systems to be applicable in flexible applications.…”

Polarization-sensitive infrared photodetectors based on van der Waals heterojunction with the unilateral depletion region

“…Due to its structural anisotropy, BP has polarized absorption for infrared light, opening up the possibility of infrared polarization detection [20][21][22][23]. Additionally, platinum disulfide (PtS 2 ), as a group-10 transition metal dichalcogenide with large carrier concentration and high mobility, can act as an efficient carrier-selective contact and has few heterointerfaces for reverse tunneling electrons barriers [24][25][26][27]. Most of the current reports are based on the excellent electrical properties of PtS 2 [27][28][29], and less research has been published on the infrared detection of heterojunctions.…”