High Temperature 4H-SiC FET for Gas Sensing Applications

Remote sensing system for hydrogen using GaN Schottky diodes

“…exposure to molecular hydrogen at 400 • C [8]. Other reports on Pt/GaN Schottky diode gas sensors have shown their ability to detect hydrogen and propane at temperatures up to at least 400 • C [3]. However, to date, there has been no quantification of the change in effective barrier height in GaN diodes after exposure to hydrogen-containing gases.…”

“…In addition, these detectors would have dual-use in automobiles and aircraft, fire detectors, exhaust diagnosis and emissions from industrial processes [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The high-temperature capabilities of GaN electronics and sensors will reduce spacecraft launch weighs and increase satellite functional capabilities.…”

Recent advances in wide bandgap semiconductor-based gas sensors

“…Of particular interest in developing wide bandgap sensors are methods for detecting ethylene (C 2 H 4 ), which presents problems because of its strong double bonds and, hence, the diffi culty in dissociating it at modest temperatures (Vasiliev et al , 1998;Savage et al , 2000;Mitzner et al , 2003). Ideal sensors have the ability to discriminate between different gases, and arrays that contain different metal oxides (e.g.…”

Materials Design for the Improvement of SiC Field Effect Gas Sensor performance in High Temperature Process Control applications

“…Besides processing-related constraints in relation to a reduction in gate length, the transistor characteristics will also be altered in a manner which would counteract the increase in transistor gain when the channel length is made progressively shorter (for a more elaborate treatment of this subject, see the section about short-channel devices in [197]). Further treatments in relation to the application of field effect transistors as transducers in gas sensors can be found in [199][200][201][202].…”