Recent advances in wide bandgap semiconductor-based gas sensors

Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H+- and D+-Implanted Ga2O3

“…β-Ga 2 O 3 is a promising ultrawide bandgap semiconductor with a bandgap energy of near 4.9 eV. [1][2][3][4][5][6] Ga 2 O 3 is being widely investigated for use in high-power devices, solar-blind detectors, sensors, and extreme environments.…”

Recent progress on group III nitride nanostructure-based gas sensors

“…95 Likewise, in 2002, they reported the high sensitivity of group III nitride-based gas sensors to nitrogen dioxide (NO 2 ) and the potential use of GaN Schottky diode-based sensors. 3–40 Chung et al 87 demonstrated AlGaN/GaN high-electron mobility transistor (HEMT) sensors for hydrogen gas detection at high temperatures and under exposure to irradiation. This gas sensor was fabricated on AlGaN/GaN with Si as the substrate using platinum (Pt) as the gate electrode material for hydrogen detection in the gate area.…”

“…Further, many acidic and basic solutions present in living tissues can corrode Si easily. 11 Thus, it is necessary to find materials with chemical resistance and high temperature/high power capability with the sensing property of semiconductors.…”