2011 Proceedings of the ESSCIRC (ESSCIRC) 2011
DOI: 10.1109/esscirc.2011.6045015
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High-swing class-C VCO

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Cited by 53 publications
(28 citation statements)
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“…Figure 11 depicts the results of this comparison. The values in the range of better than -185 dBc/Hz are in line with FOMT levels for sub-1 V power supply CMOS VCO circuits reported in the literature [6], [8]- [12].…”
Section: B Power Consumption Tuning Range and Figure Of Merit Simulsupporting
confidence: 88%
“…Figure 11 depicts the results of this comparison. The values in the range of better than -185 dBc/Hz are in line with FOMT levels for sub-1 V power supply CMOS VCO circuits reported in the literature [6], [8]- [12].…”
Section: B Power Consumption Tuning Range and Figure Of Merit Simulsupporting
confidence: 88%
“…This can be obtained for example by setting the gate voltage of MOS transistors below a threshold voltage so the only force periodically switching the transistors "on" and "off", comes from the sinusoidal signal generated by the oscillator itself. Thus, while biased in class-C, active devices in the oscillator core stay "on" for shorter time during each period than during start-up [1][2][3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…It is obvious that phase noise increases with the supply voltage decreasing. According to Leesons phase noise equation [17,18], the output carrier power of VCO can become 4 times if the supply voltage is double, and phase noise decreases 6 dB with the same noise power, which can simply explain the dotted line in Fig. 17.…”
Section: Class-c Vco Ic Performancementioning
confidence: 97%