High speed turn-on reverse conducting 4kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators

Shimizu, Naohiro; Miyoshi, Makoto; Tange, Shoji; Sekiya, Takayuki; Ito, Takamasa; Sakuma, T.; Sakurai, Tsunehisa; Terasawa, Tsuneo; Hatano, Masayuki; Hotta, Souzaburo; Imanishi, Yuichiro; Okimoto, A.; Asai, Michihiro; Oda, Osamu; Nishizawa, Jun–ichi

doi:10.1016/j.sse.2006.08.014

Cited by 8 publications

References 7 publications

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Physical effect on transition from blocking to conducting state of barrier-type thyristor

Li¹,

Li²

2010

J. Semicond.

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The transition of the barrier-type thyristor (BTH) from blocking to conducting-state occurs between two entirely contrary physical states with great disparity in nature. The physical effects and mechanisms of the transition are studied in depth. The features of the transition snapback point are analyzed in detail. The transition snapback point has duality and is just the position where the barrier is flattened. It has a significant influence on the capture crosssection of the hole and high-level hole lifetime, resulting in the device entering into deep base conductance modulation. The physical nature of the negative differential resistance segment I -V characteristics is studied. It is testified by using experimental data that the deep conductance modulation is the basic feature and the linchpin of the transition process. The conditions and physical mechanisms of conductance modulation are investigated. The related physical subjects, including the flattening of the channel barrier, the buildup of the double injection, the formation of the plasma, the realization of the high-level injection, the elimination of the gate junction depletion region, the deep conductance modulation, and the increase in the hole's lifetime are all discussed in this paper.

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Physical effect on transition from blocking to conducting state of barrier-type thyristor

Li¹,

Li²

2010

J. Semicond.

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A new static induction thyristor with high forward blocking voltage and excellent switching performances

et al. 2010

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A new static induction thyristor (SITH) with a strip anode region and p buffer layer structure (SAP B) has been successfully designed and fabricated. This structure is composed of a p buffer layer and lightly doped n regions embedded in the p C -emitter. Compared with the conventional structure of a buried-gate with a diffused source region (DSR buried-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-off time decreased from 0.8 to 0.4 s.

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Static induction emitter diode (SIED)

Yura

Nishizawa²

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)

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A new concept of the fast recovery diode is presented. It is necessary to optimize the both anode and cathode structures in order to realize the compatibility of the high reverse voltage, the low forward voltage drop, and the fast and soft reverse recovery characteristics. Based on this concept, the Static Induction Emitter Diode, SIED has been developed. In this paper, the operating mechanism of the SIED by simulation and the experimental results are described.

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High speed turn-on reverse conducting 4kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators

Cited by 8 publications

References 7 publications

Physical effect on transition from blocking to conducting state of barrier-type thyristor

Physical effect on transition from blocking to conducting state of barrier-type thyristor

A new static induction thyristor with high forward blocking voltage and excellent switching performances

Static induction emitter diode (SIED)

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