A new concept of the fast recovery diode is presented. It is necessary to optimize the both anode and cathode structures in order to realize the compatibility of the high reverse voltage, the low forward voltage drop, and the fast and soft reverse recovery characteristics. Based on this concept, the Static Induction Emitter Diode, SIED has been developed. In this paper, the operating mechanism of the SIED by simulation and the experimental results are described.
We developed a highly reliable 1200-V p-type MOSFET for level-shift circuits. A new phenomenon, in which the leakage current increases and decreases irregularly in AC half-wave bias near avalanche voltage and the blocking voltage decreases with the long-term durability, was observed from test results of developed prototype driver ICs at an AC half-wave voltage of 1380 V.We analyzed this phenomenon through device simulation.The reason of this phenomenon was that the avalanche point of a prototype 1200-V p-type MOSFET shifted and the leakage current changed in one cycle of the AC half wave. The device structure and process were improved on the basis of this analysis, resulting in a highly reliable p-type MOSFET.
SUMMARYTurn-on characteristics of semiconductor power devices are evaluated under external magnetic field to study the effects of external magnetic field generated in a pulsed power circuit. Two pin diodes that have a basic structure of power devices are connected in parallel and driven by a pulsed voltage source. It was found the magnetic field applied to one diode in the perpendicular direction of current-flow changed the current balance between the diodes. Besides the on-resistance of a diode was increased under external magnetic field. The carrier-density distribution inside of the diodes was measured by using a free carrier absorption method. The data show that the carrierdensity distribution changes from nearly the uniform one to the one-sided one. It can be concluded that the effects of magnetic-field have to be considered for the evaluation of switching characteristic in pulsed power operations.
Turn-on characteristics of semiconductor power devices are evaluated under external magnetic field to study the effects of external magnetic field generated in a pulsed power circuit. Two pin diodes that have a basic structure of power devices are connected in parallel and driven by a pulsed voltage source. It was found the magnetic field applied to one diode in the perpendicular direction of current-flow changed the current balance between the diodes. Besides the on-resistance of a diode was increased under external magnetic field. The carrier-density distribution inside of the diodes was measured by using a free carrier absorption method. The data show that the carrier-density distribution changes from nearly the uniform one to the one-sided one. It can be concluded that the effects of magnetic-field have to be considered for the evaluation of switching characteristic in pulsed power operations.Keywords: pulsed power semiconductor power device magnetic field carrier-density distribution free carrierabsorption technique
1.MW kV kA * 152-8552 2-12
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