High‐speed pixel circuits for large‐sized 3‐D AMOLED displays

Park, Dong Wook; Kang, Chul-Kyu; Park, Yong-Sung; Chung, Bo-Yong; Chung, Kee Yun; Kim, Keum-Nam; Kim, Byung-Hee; Kim, Sang Soo

doi:10.1889/jsid19.4.329

Cited by 15 publications

(18 citation statements)

References 11 publications

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“…The compensation timing is explained clearly in [65], [66] and can be seen that sophisticated techniques are needed for both LTPS and AOS to improve the compensation accuracy in limited time.…”

Section: B Frame Ratementioning

confidence: 99%

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

et al. 2015

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This paper reviews the current status of the ubiquitous oxide semiconductor technology for flexible and transparent interactive displays.ABSTRACT | Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental building blocks for a new generation of applications ranging from interactive displays and imaging to future electronic systems that are unconstrained by form factor. This makes the quest for high mobility materials processed at low temperatures even more compelling, to enable the layering of circuits and systems on plastic and possibly even paper substrates. Transparency is also an attractive feature that enables seamless embedding of electronics for the immersive ambient. This paper reviews the current status of the ubiquitous oxide semiconductor technology for flexible and transparent interactive displays, along with demonstrated examples of continuous thin film and nanowire systems for the transistor and sensor. Issues related to photosensing and active matrix operation are discussed along with solutions addressing the problem of threshold voltage instability and its compensation for fast recovery, particularly after light stress. Physics-based compact models for expedient design and simulation of analog and digital circuits are reviewed along with examples of key system building blocks. Finally we attempt to conceptualize a thin film transistor (TFT)-based fully heterogeneously integrated and autonomous system that can be realized using a combination of oxide and other technological routes. KEYWORDS | Active matrix organic light emitting diode (AMOLED); amorphous oxide semiconductors (AOS); interactive displays; nanowire transistors; oxygen defects; thin film transistors (TFTs) Manuscript

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Section: B Frame Ratementioning

confidence: 99%

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

et al. 2015

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“…In this letter, the above driving scheme is named as threshold voltage one-time detection method, which can also be applied to other pixel circuits such as references [1] or [6]. Note that the T 4 of Fig.…”

Section: Proposed Pixel Circuit Operationmentioning

confidence: 99%

“…Note that the T 4 of Fig. 5 in [6] is unnecessary by using our proposed method. However, for metal oxide TFTs such as IZO TFTs, the threshold voltage may be gradually shifted from its initial value by electrical stress over time [8].…”

Section: Proposed Pixel Circuit Operationmentioning

confidence: 99%

High-Speed Voltage-Programmed Pixel Circuit for AMOLED Displays Employing Threshold Voltage One-Time Detection Method

Xia

et al. 2013

IEEE Electron Device Lett.

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This letter presents a high-speed, voltageprogrammed pixel circuit for active-matrix organic light-emitting diode displays employing threshold voltage one-time detection method. The proposed pixel circuit that consists of one driving thin-film transistor (TFT), four switching TFTs, two capacitors, and four control signal lines can effectively compensate for the threshold voltage shift of the driving TFT and the OLED degradation. The threshold voltage of one-time detection method is realized by an ingenious application of capacitor coupling effect, and it is well-verified by comparing it with the conventional driving scheme. In this method, data is directly renewed without the periods of initialization and threshold voltage detection from the second-frame beginning. Moreover, this method can also be applied to other compensation pixel circuits.Index Terms-Active-matrix organic light-emitting diode (AMOLED), high speed, pixel circuit.

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“…For example, in the case of the low-temperature polycrystalline silicon (LTPS) TFT, the device parameters such as the carrier mobility, threshold voltage (V th ), and subthreshold swing vary depending on the random distribution of the grain boundaries in the polycrystalline silicon (poly-Si) film [1,2]. The conventional pixel circuits are designed to compensate only for the variation of the V th of the TFT [3][4][5][6][7][8]. The V th compensation is more effective than the compensation of other parameters, such as the mobility and subthreshold swing, because the OLED-driving TFT operates around the threshold point to realize a high contrast ratio, and the variation of V th critically affects the TFT current in this bias range.…”

Section: Introductionmentioning

confidence: 99%

“…As a result, the OLED current that is identical to the current of M1 is determined independently of the V th of M1, as expressed by Equation (1). Other V th compensation circuits work in a similar way [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effects of TFT mobility variation in the threshold voltage compensation circuit of the OLED display

손영하

문금주

최광현

et al. 2016

Journal of Information Display

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A pixel circuit that compensates for the non-uniform thin-film transistor (TFT) characteristics across a display panel is inevitably used in the organic light-emitting diode (OLED) display to exhibit uniform brightness. The existing pixel circuits aim to compensate only for the non-uniformity of the threshold voltage (V th ). They do not compensate for the deviation of the other parameters, such as the mobility and the subthreshold swing. In this study, how the OLED current changes when the mobility of a TFT in the V th compensation circuit increases was examined. If the mobility increases, the enhanced drain current drives the TFT into a deeper subthreshold mode during the V th compensation phase, and the |V GS | of the TFT decreases compared with the normal mobility case. The resultant OLED current, however, can be higher or lower than the normal mobility case depending on the gray level because the effects of the current increase due to the higher mobility and of the current decrease due to the reduced |V GS | appear simultaneously but differently depending on the V GS value of the TFT. The analysis results show that the OLED current increases for the high gray level but decreases for the low gray level. It remains almost unaffected by the mobility increase for the mid-gray level. ARTICLE HISTORY

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High‐speed pixel circuits for large‐sized 3‐D AMOLED displays

Cited by 15 publications

References 11 publications

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

High-Speed Voltage-Programmed Pixel Circuit for AMOLED Displays Employing Threshold Voltage One-Time Detection Method

Effects of TFT mobility variation in the threshold voltage compensation circuit of the OLED display

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