Herein, we describe a novel integrated biosensor for performing dielectric spectroscopy to analyze biological samples. We analyzed biomolecule samples with different concentrations and demonstrated that the solution's impedance is highly correlated with the concentration, indicating that it may be possible to use this sensor as a concentration sensor. In contrast with standard spectrophotometers, this sensor offers a low-cost and purely electrical solution for the quantitative analysis of biomolecule solutions. In addition to determining concentrations, we found that the sample solution impedance is highly correlated with the length of the DNA fragments, indicating that the sizes of PCR products could be validated with an integrated chip-based, sample-friendly system within a few minutes. The system could be the basis of a rapid, low-cost platform for DNA characterization with broad applications in cancer and genetic disease research.

The two major backplane technologies for AMOLED displays are LTPS and oxides. Despite their similarities, the differences are significant requiring intricate design considerations and compensation techniques to achieve good display uniformity and lifetime while eliminating second order effects associated with IR drop, ground bouncing, and parasitic capacitance. This paper presents a study in contrasts between LTPS and oxide backplane technologies from the standpoint of system design and compensation techniques.

Providing a reliable and consolidated treatment of the principles behind large-area electronics, this book contains a comprehensive review of the design challenges associated with building circuits and systems from thin film transistors. The authors describe the architecture, fabrication, and design considerations for the principal types of TFT, and their numerous applications. The practicalities of device non-ideality are also addressed, as are the specific design considerations necessitated by instabilities and non-uniformities in existing fabrication technologies. Containing device-circuit information, discussion of electronic solutions that compensate for material deficiencies, and design methodologies applicable to a wide variety of organic and inorganic disordered materials, this is an essential reference for all researchers and circuit and device engineers working on large-area electronics.

Micro‐LED has been considered the ultimate of what emissive displays can offer. In theory, these displays should not have any of their predecessor challenges. However, the reality is different and several major challenges should be addressed priorr to micro‐LED makes a huge entry.

This paper reviews the current status of the ubiquitous oxide semiconductor technology for flexible and transparent interactive displays.ABSTRACT | Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental building blocks for a new generation of applications ranging from interactive displays and imaging to future electronic systems that are unconstrained by form factor. This makes the quest for high mobility materials processed at low temperatures even more compelling, to enable the layering of circuits and systems on plastic and possibly even paper substrates. Transparency is also an attractive feature that enables seamless embedding of electronics for the immersive ambient. This paper reviews the current status of the ubiquitous oxide semiconductor technology for flexible and transparent interactive displays, along with demonstrated examples of continuous thin film and nanowire systems for the transistor and sensor. Issues related to photosensing and active matrix operation are discussed along with solutions addressing the problem of threshold voltage instability and its compensation for fast recovery, particularly after light stress. Physics-based compact models for expedient design and simulation of analog and digital circuits are reviewed along with examples of key system building blocks. Finally we attempt to conceptualize a thin film transistor (TFT)-based fully heterogeneously integrated and autonomous system that can be realized using a combination of oxide and other technological routes. KEYWORDS | Active matrix organic light emitting diode (AMOLED); amorphous oxide semiconductors (AOS); interactive displays; nanowire transistors; oxygen defects; thin film transistors (TFTs) Manuscript

Organic light emitting diode (OLED) displays are a serious competitor to liquid crystal displays in view of their superior picture quality, higher contrast, faster on/off response, thinner profile, and high power efficiency. For large area and/or high-resolution applications, an active matrix OLED (AMOLED) addressing scheme is vital. The active matrix backplane can be made with amorphous silicon (a-Si), polysilicon, or organic technology, all of which suffer from threshold voltage (V T ) shift and/or mismatch problems, causing temporal or spatial variations in the OLED brightness. In addition, the efficiency of the OLED itself degrades over time. Despite these shortcomings, there has been considerable progress in development of AMOLED displays using circuit solutions engineered to provide stable and uniform brightness. Indeed the design of AMOLED pixel circuits, particularly in low-mobility TFT technologies such as a-Si, is challenging due to the stringent requirements of timing, current matching, and low voltage operation. While circuit solutions are necessary, they are not sufficient. Process improvements to enhance TFT performance are becoming inevitable. This paper will review pertinent material requirements of AMOLED backplanes along with design considerations that address pixel architecture, contact resistance, and more importantly, the V T -stability and associated gate overdrive voltage, V GS -V T . In particular, we address the question of whether conventional PECVD can be deployed for high mobility and high V T -stability TFTs, and if micro-/nanocrystalline silicon could provide the solution.

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This paper reviews the importance of device-circuit interactions (DCI) and its consideration when designing thin film transistor circuits and systems. We examine temperature-and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are then reviewed to show examples of how DCI is considered in the design of AMOLED displays. Other designs such as analog front-end and image sensors are also discussed, where alternate circuits should be designed to overcome the limitations of the intrinsic device properties. Manuscript received, xxx.2016 Index Terms-Small signal model, s parameter, TFT, cutoff frequency, V T shift