High-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy

Abstract

We present results on high-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy. In addition to the dc operating characteristics, we also report the first impulse response and microwave frequency response measurements of GaAs-on-Si photodiodes. Results include an impulse response pulse width of 45 ps and a modulation corner frequency >4 GHz at a reverse bias of −3 V.

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

“…Performing a similar analysis on the data published by Morkoç and colleagues, 36 one finds that the resistivity of the intrinsic region of the heteroepitaxial GaAs/Si p-i-n diodes of that study appears to be more than an order of magnitude lower than that of the present work. This is consistent with the devices of the present study having a threading dislocation density that is more than an order of magnitude smaller than that reported by Morkoç et al It should be noted that the devices being compared have a similar geometry and doping profile, except that the width of the intrinsic region of the previous study was roughly five times larger.…”

“…A similar analysis performed on the data published by Morkoç and co-workers 36 [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions.…”

“…26 However, the value published by Morkoç and colleagues is significantly less than the value of the present work. 36 The data published by Chand and co-workers 37 yields a similarly small breakdown value. This is again consistent with a dislocation density in those films which is nearly two orders of magnitude larger than that of the present work.…”