Electronic and optical devices with gallium arsenide on silicon prepared by MBE

Morkoç̌, H.

doi:10.1016/0022-0248(89)90356-4

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Electronic and optical devices with gallium arsenide on silicon prepared by MBE

Cited by 6 publications

References 29 publications

Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001): An in-situ X-ray scattering study

Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001): An in-situ X-ray scattering study

Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction

Molecular Beam Epitaxy

Contact Info

Product

Resources

About