Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction

Etgens, V. H.; Pinchaux, R.; Sauvage‐Simkin, M.; Massies, J.; Jedrecy, N.; Greiser, N.; Tatarenko, S.

doi:10.1016/0039-6028(91)91038-y

Cited by 20 publications

(5 citation statements)

References 9 publications

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“…At temperatures above 540°C another 6ϫ1 reconstruction and a ͱ3ϫ3 reconstruction are observed. These findings were confirmed afterwards by Etgens et al 6 Sugiyama and Maeyama 7 obtained a 2ϫ1 reconstruction by evaporating Te onto GaAs at 450°C.…”

Section: Introductionmentioning

confidence: 53%

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First-principles simulation of Se and Te adsorbed on GaAs(001)

Gündel

Faschinger

1999

Phys. Rev. B

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We have studied the adsorption of Se and Te on GaAs͑001͒ using first-principles simulations. For each chalcogen species, 11 structures exhibiting 2ϫ1 reconstruction with varying surface stoichiometry were simulated using a density functional formalism and pseudopotentials, thus yielding absolute surface energies and detailed information about the atomic positions. Our results are discussed in terms of a simple model for heteropolar surfaces and compared to experimental results for these surfaces available from the literature.

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Section: Introductionmentioning

confidence: 53%

“…Of course a more Te-rich structure such as 6A could be formed initially, while after the ZnSe growth start a certain amount of Ga and Te desorbs. However, the average coverage of 0.8-1.0 atomic layers reported in the literature 5,6 for the Te-adsorbed GaAs͑001͒ surface renders this alternative less probable.…”

Section: B the Te-adsorbed Surfacesmentioning

confidence: 99%

First-principles simulation of Se and Te adsorbed on GaAs(001)

Gündel

Faschinger

1999

Phys. Rev. B

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“…Grazing incidence X-ray diffraction is sensitive to lattice structure of surface layers of depths less than 100 nm [15][16][17][18]. It is well known that total external reflection of X-ray from a smooth surface occurs at all grazing incidence angles α i less than or equal to a critical angle α c given by [19] …”

Section: Methodsmentioning

confidence: 99%

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Tan

Cai

et al. 2005

Journal of Alloys and Compounds

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“…Chalcogenide layers can act as passivation layers, as well as precursors to the formation of other compounds on GaAs substrates. − Tu et al studied the (110) and (100) interfaces between GaAs and ZnSe or Se deposited in ultrahigh vacuum (UHV) on sputter-annealed substrates, via low-energy electron diffraction (LEED), Auger electron spectra (AES), and electron energy loss spectra (EELS) . They grew ZnSe thin films by evaporating ZnSe powder, followed by postdeposition annealing, to a variety of temperatures.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Vacuum Surface Studies of the Electrochemical Atomic Layer Deposition of Indium Telluride on n-Type GaAs(100)

Kim

Stickney

2008

J. Phys. Chem. C

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The electrodeposition of tellurium (Te) and indium (In) atomic layers on n-type GaAs(100) substrates is described. As-received n-GaAs(100) substrates were treated in 10% HF and ultraviolet (UV) ozone cleaned. The substrates were then transferred to an ultrahigh vacuum (UHV) chamber and cleaned by Ar + ion bombardment. The clean substrate was then transferred into an attached electrochemistry ante-chamber and immersed in a telluride solution, where a number of deposition potentials were investigated. The resulting Auger peak height ratios, Te/Ga, were plotted versus the Te deposition potential. From the Auger ratios, it was evident that bulk Te was formed between -0.4 and -0.8 V, while below -0.8 V, a reduction feature was observed corresponding to the reduction of Te to the telluride ion (Te 0 + 2ef Te 2-). Below -0.9 V, only a surface-limited atomic layer of Te was left on the GaAs surface. Indium deposition on this Te-coated GaAs surface was also performed, and electrodeposited adlayer thicknesses were calculated from the Auger data. Indium electrodeposited directly on the GaAs surface resulted in 3D nucleation and growth of widely spaced In clusters. Electrodeposition of In on an atomic layer of Te on the GaAs surface resulted in layerby-layer growth. Alternation of atomic layers of Te and In resulted in formation of indium telluride nanofilms, probably In 2 Te 3 , by electrochemical atomic layer deposition (ALD). Deposits with up to three cycles were performed.

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Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction

Cited by 20 publications

References 9 publications

First-principles simulation of Se and Te adsorbed on GaAs(001)

First-principles simulation of Se and Te adsorbed on GaAs(001)

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Ultrahigh Vacuum Surface Studies of the Electrochemical Atomic Layer Deposition of Indium Telluride on n-Type GaAs(100)

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