We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN-PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal-insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.

The geometric, optical, and magnetic properties of the M@Sn(12) clusters (M=Ti, V, Cr, Mn, Fe, Co, Ni) are studied using the relativistic density-functional method. The geometric optimization shows that the ground states of these clusters are probably very close to the I(h) structure. Our calculations demonstrate that the optical gaps of the M@Sn(12) can be tuned from infrared to green, and the magnetic moments of them vary from 2 mu(B) to 5 mu(B) by doping d transition metal atoms into Sn(12) cage, suggesting that M@Sn(12) could be a new class of potential nanomaterials with tunable magnetic and optical properties.

The electric field manipulation of magnetic anisotropy and domain configuration has been investigated in the artificial multiferroic Co/PMN-PT (011) heterostructure at room temperature. A uniaxial magnetic anisotropy is induced with the application of an electric field, which leads to an electrically switched anisotropic magnetoresistance with tunability as large as ∼29%. Furthermore, the magnetic domain structures of Co films are investigated by magnetic force microscopy under an in situ electric field, which exhibits direct evidence for electric field control of magnetism at the mesoscale. The converse magnetoelectric effect demonstrated in this multiferroic heterostructure has potential to be utilized in magnetoelectric devices with low power consumption.

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Two-dimensional topological materials, in the form of ultrathin films grown on substrates, are outstanding candidates for spintronic applications. Their electronic structures including the topological class can be tuned or altered by strain and isoelectronic substitutional alloying. First-principles calculations show that the topological order of a monolayer Bi, bismuthene, is unusually robust against strain and changes in spin-orbit coupling strength. The phase diagram shows a large area in which the system is a topological insulator; phase boundaries for transforming into other phases, trivial or not, are mapped out.

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