2019
DOI: 10.1109/led.2019.2941548
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High Speed and Wider Swing, Level Shifter Using Low-Temperature Poly-Silicon Oxide TFTs

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Cited by 30 publications
(22 citation statements)
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“…3(d)) and operational in the broad clock frequency range of (1-500) kHz. For an input swing of (2-10) V, the LTPO LS shows a shifted output swing of (10-30) V with the full 'rail-torail' character [2]. Previously, level shifter integrated gate driver is realized with a-Si TFTs [10], a-IGZO depletion-mode TFTs [11]- [12] or with LTPS TFTs [13].…”
Section: Resultsmentioning
confidence: 99%
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“…3(d)) and operational in the broad clock frequency range of (1-500) kHz. For an input swing of (2-10) V, the LTPO LS shows a shifted output swing of (10-30) V with the full 'rail-torail' character [2]. Previously, level shifter integrated gate driver is realized with a-Si TFTs [10], a-IGZO depletion-mode TFTs [11]- [12] or with LTPS TFTs [13].…”
Section: Resultsmentioning
confidence: 99%
“…Low-Temperature Poly-Si (LTPO) thin-film transistor (TFT) technology is becoming a new sensation for the Active Matrix Organic Light-Emitting Diodes (AMOLED) and Ultra-High-Definition (UHD) displays [1]. Usually the oxide TFT exhibits ultra-low off-state leakage current < 10 -14 A, decent high mobility over 10 cm 2 /V.s, and can be manufactured at low temperature with low manufacturing cost [2]. LTPS TFT is proud of high mobility and excellent stability [3] although high off-state current (~ 10 -12 A) still reckons a weak point.…”
Section: Introductionmentioning
confidence: 99%
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“…We have recently developed a low cost LTPS process using blue laser annealing (BLA) technology instead of ELA [5], and a shared gate process to reduce the number of masks required in the LTPO process, which can reduce the manufacturing cost. A few highperformance circuits using our LTPO process have also reported [6][7], which present the potentiality of this emerging technology.…”
Section: Introductionmentioning
confidence: 93%
“…Beside, using oxide and LTPS transistors in panel circuits for low power consumption display has been reported 6–12 . In this paper, we have proposed high refresh rate and low power consumption OLED panel, by simultaneously utilizing both p‐LTPS and n‐type indium–gallium–zinc–oxide (n‐IGZO).…”
Section: Introductionmentioning
confidence: 99%