High speed AlGaAs/GaAs HBT circuits for up to 40 Gb/s optical communication

Runge, K.; Zampardi, P.J.; Pierson, R.; Thomas, Philipp; Beccue, S.; Yu, R.; Wang, K.C.

doi:10.1109/gaas.1997.628271

Cited by 11 publications

(1 citation statement)

References 10 publications

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“…Recently, several 40-Gbit/s class ICs using Si bipolar, GaAs MESFETs, GaAs HBTs, GaAs HFETs, InP HFETs, 255 and InP HBTs have been reported. [6][7][8][9][10][11] Among them, InP-based devices are very promising because of the excellent electron transport properties of the material systems and the capability of monolithic integration with photonic devices.…”

Section: Introductionmentioning

confidence: 99%

Present Status and Future Prospects of High-Speed Lightwave Ics Based on Inp

Sano

Hagimoto

Ishii

1998

Int. J. Hi. Spe. Ele. Syst.

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High-speed integrated circuits (ICs) are essential for expanding the capacity of lightwave communications. InP-based heterostructure field effect transistors (HFETs) and heterojunction bipolar transistors (HBTs) are very promising for producing high-speed digital and analog ICs. This paper reviews the current status of InP-based lightwave communication ICs in terms of device, circuit, and packaging technologies. A successful 40-Gbit/s, 300-km optical fiber transmission using InP HFET ICs demonstrates the feasibility of the ICs. Furthermore, we estimate future IC performance based on the relationship between electron device figures-of-merit and IC speed. To keep up with the performance trend, technological problems, like inter-and intra-chip interconnections, have to be solved. Int. J. Hi. Spe. Ele. Syst. 1998.09:567-593. Downloaded from www.worldscientific.com by UNIVERSITY OF QUEENSLAND on 02/03/15. For personal use only. Transmitter Receiver 2D.

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