High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits

Oka, Tohru; Hirata, Kohji; Suzuki, Hideyuki; Ouchi, K.; Uchiyama, Hiroyuki; Taniguchi, T.; Mochizuki, Kazuhiro; Nakamura, Tsuneyoshi

doi:10.1109/16.960388

Cited by 23 publications

(10 citation statements)

References 17 publications

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“…Heterojunction bipolar transistors (HBTs) have attracted significant interest of high-speed digital and microwave circuit applications due to their superior performance [1,2]. However, the conventional HBTs suffered from a large collector-emitter offset voltage (DV CE ) resulting from a considerable base-emitter (B-E) turn-on voltage, which severely limits the minimum operated voltage and causes high power consumption in circuit applications [3,4].…”

Section: Introductionmentioning

confidence: 99%

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Tsai

Hsu

et al. 2008

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Tsai

Hsu

et al. 2008

Solid-State Electronics

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“…[1][2][3][4][5][6] One of the most favorable properties of HBT devices is the unusually high linearity at relatively low levels of DC power. Various approaches have been proposed to calculate the intermodulation distortion and two-tone characteristics for a HBT device in both time and frequency domains.…”

Section: Introductionmentioning

confidence: 99%

“…Various approaches have been proposed to calculate the intermodulation distortion and two-tone characteristics for a HBT device in both time and frequency domains. [1][2][3][4][5][6][7][8][9][10] However, the extraction and optimization of the equivalent circuit model, as well as its parameters, for both DC characteristics and RF property of the HBTs are typically accomplished in either of two fundamental approaches: numerical optimization or direct parameter extraction. [5][6][7][8] These approaches have their merits, but they may have local optimization, divergence, and time-consuming problems.…”

Section: Introductionmentioning

confidence: 99%

A Genetic Algorithm Approach to InGaP/GaAs HBT Parameter Extraction and RF Characterization

Cho

Wang

et al. 2003

Jpn. J. Appl. Phys.

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In this paper, a computational intelligence technique is applied to extract and simulate the stationary and high-frequency properties of heterojunction bipolar transistors (HBTs). A set of HBT circuit equations formulated with the Gummel-Poon model in time domain is solved with (1) the waveform relaxation (WR), (2) monotone iterative (MI) method, and (3) genetic algorithm (GA) with floating-point operators. The coupled nonlinear equations are decoupled and solved with the WR and MI methods in time domain, and the results obtained are used for the optimization of the characteristics with the GA method. The iteration can be terminated when the final convergent global solution is obtained. The time domain result is used in analyzing the property of the output third-order intercept point (OIP3) with the fast Fourier transform (FFT). Compared with the SPICE result, our simulation results demonstrate that this method is accurate and stable in high frequency simulation. This approach has practical applications in HBT characterization and radio frequency (RF) circuit optimal design.

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“…High power heterojunction bipolar transistors (HBTs) operated at micrometerand millimeter-wave frequencies have been of great interest; in particular, for the advanced wireless and fiber communication [1], [2], [3], [4], [5]. These transistors, fabricated for high power applications, usually have a structure of multiple fingers to spread the current and the dissipated heat.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Self-heating InGaP/GaAs Heterojunction Bipolar Transistors

Huang

2005

Lecture Notes in Computer Science

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Abstract.We numerically simulate effects of the self-heating on the current-voltage characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs). A set of coupled nonlinear ordinary differential equations (ODEs) of the equivalent circuit of HBT is formed and solved numerically in the large-signal time domain. We decouple the corresponding ODEs using the waveform relaxation method and solve them with the monotone iterative method. The temperature-dependent energy band gap, the current gain, the saturation current, and the thermal conductivity are considered in the model formulation. The power-added efficiency and the 1-dB compression point of a three-finger HBT are calculated. This approach successfully explores the self-heating and the thermal coupling phenomena of the three-finger transistors under high power and high frequency conditions. The numerical algorithm reported here can be incorporated into electronic computer-aided design software to simulate ultra-large scale integrated and radio frequency circuits.

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High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits

Cited by 23 publications

References 17 publications

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

A Genetic Algorithm Approach to InGaP/GaAs HBT Parameter Extraction and RF Characterization

Numerical Simulation of Self-heating InGaP/GaAs Heterojunction Bipolar Transistors

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