A propagating Majorana mode Although Majorana fermions remain elusive as elementary particles, their solid-state analogs have been observed in hybrid semiconductor-superconductor nanowires. In a nanowire setting, the Majorana states are localized at the ends of the wire. He et al. built a two-dimensional heterostructure in which a one-dimensional Majorana mode is predicted to run along the sample edge (see the Perspective by Pribiag). The heterostructure consisted of a quantum anomalous Hall insulator (QAHI) bar contacted by a superconductor. The authors used an external magnetic field as a “knob” to tune into a regime where a Majorana mode was propagating along the edge of the QAHI bar covered by the superconductor. A signature of this propagation—half-quantized conductance—was then observed in transport experiments. Science , this issue p. 294 ; see also p. 252

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Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

Strong spin−orbit interaction and time-reversal symmetry in topological insulators enable the spin-momentum locking for the helical surface states. To date, however, there has been little report of direct electrical spin injection/ detection in topological insulator. In this Letter, we report the electrical detection of spin-polarized surface states conduction using a Co/Al 2 O 3 ferromagnetic tunneling contact in which the compound topological insulator (Bi 0.53 Sb 0.47 ) 2 Te 3 was used to achieve low bulk carrier density. Resistance (voltage) hysteresis with the amplitude up to about 10 Ω was observed when sweeping the magnetic field to change the relative orientation between the Co electrode magnetization and the spin polarization of surface states. The two resistance states were reversible by changing the electric current direction, affirming the spin-momentum locking in the topological surface states. Angle-dependent measurement was also performed to further confirm that the abrupt change in the voltage (resistance) was associated with the magnetization switching of the Co electrode. The spin voltage amplitude was quantitatively analyzed to yield an effective spin polarization of 1.02% for the surface states conduction in (Bi 0.53 Sb 0.47 ) 2 Te 3 . Our results show a direct evidence of spin polarization in the topological surface states conduction. It might open up great opportunities to explore energy-efficient spintronic devices based on topological insulators. KEYWORDS: Topological insulator, spin polarization, surface states, spin-momentum locking, spin detection S ince the discovery of two-dimensional (2D) and threedimensional (3D) topological insulators (TIs), 1−5 they have attracted extensive research interest for their exotic physical properties that could lead to dissipationless transport in the quantum spin Hall state. 6−9 Recent studies have shown a giant spin−orbit torque in TI originating from the strong spin− orbit interaction, 10,11 which enabled the current-induced magnetization switching through spin-transfer torque with a low current density. The unique feature of 3D TI, for instance, is that it has both insulating bulk and gapless Dirac surface states. 8,9 Ternary TI compounds, such as (Bi x Sb 1−x ) 2 Te 3 , have been widely investigated for their tunability to achieve low bulk carrier density and manifest topological surface states conduction. 12,13 The presence of surface states is supported by extensive angle-resolved photoemission spectroscopy (ARPES) measurements and transport studies, 14−20 such as Shubnikov-de Haas (SdH) and Aharonov Bohm (AB) quantum oscillations. Because of the strong spin−orbital interaction in TI, direct back scatterings from nonmagnetic impurities are prohibited by the time-reversal symmetry. 8,9 More importantly, the spin-momentum locking naturally leads to a currentinduced spin polarization in surface states; 21 the surface states conduction is spin-polarized once an electric current is passed through a TI film, and this spin polarization can be...

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