High sensitivity and high gain optical functional device: Triangular-barrier optoelectronic switch (TOPS)

Sakata, H.; Utaka, Katsuyuki; Matsushima, Yuichi

doi:10.1049/el:19941179

Cited by 14 publications

(2 citation statements)

References 5 publications

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“…Possessing potential applications in microwave oscillation and digital circuits, switches with negative-differential-resistance (NDR) characteristics have been devices of great features in the recent two decades (1)(2)(3)(4)(5). Optoelectronic switches have also been applied widely in the areas of optoelectronic integrated circuits (OEICs) and optical computing for their photonic and electronic switching capabilities.…”

Section: Introductionmentioning

confidence: 99%

pnpn and npn Heterostructural Optoelectronic Devices

Guo¹

2010

ECS Trans.

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An ohmic-contact pnpn triangular-barrier optoelectronic switch (TBOS) has been fabricated. The triangular barrier is formed by inserting an InGaAs p-type delta-doped (δ(p+)) quantum well between two n--GaAs layers. Due to the hole accumulation in the δ(p+) well and the avalanche multiplication in the reverse-biased region, an S-shaped negative differential resistance (NDR) is obtained in the device characteristics. With a replacement of the ohmic-contact p-type cap layer with a Schottky-contact n-type layer in the pnpn TBOS, a Schottky-contact npn TBOS has also been proposed. A double S-shaped NDR phenomenon is observed in the npn TBOS characteristics due to the hole accumulation in the δ(p+) well and the sequential avalanche multiplications in the reverse-biased region and Schottky-contact junction. Both devices show a flexible optical function as a result of the triangular barrier heights associated with incident light.

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Section: Introductionmentioning

confidence: 99%

pnpn and npn Heterostructural Optoelectronic Devices

Guo¹

2010

ECS Trans.

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“…Since the appearance of the negative differential resistance (NDR) phenomenon in experimental current-voltage (I -V ) characteristics, devices with either S-or N-shaped NDR performances have attracted considerable attention amongst semiconductor researchers because of their good potentials for power generation in microwave and millimetre wave regions [1][2][3][4]. Moreover, multistate switches, which are capable of reducing the circuit complexity, have been widely applied to multiple-valued logic circuits [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Switches with double carrier confinement structures for multiple-valued logic applications

Guo

1998

Semicond. Sci. Technol.

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Two switching devices with different double carrier confinement structures were fabricated. One is a GaAs switch with double InGaP barriers, another with double GaAs-InGaAs delta-doped (δ-doped) quantum wells. In the characteristics of the former, because of the two-step barrier lowering induced by the processes of the carrier charging to the injection junction and carrier confinement in wells, a double S-shaped negative differential resistance (NDR) phenomenon is observed after the onsets of successive avalanche multiplications. However, only a single NDR performance is obtained in the characteristics of the latter due to one-step barrier lowering, even though successive avalanche multiplications also occur in the device operation.

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