pnpn and npn Heterostructural Optoelectronic Devices

Abstract

An ohmic-contact pnpn triangular-barrier optoelectronic switch (TBOS) has been fabricated. The triangular barrier is formed by inserting an InGaAs p-type delta-doped (δ(p+)) quantum well between two n--GaAs layers. Due to the hole accumulation in the δ(p+) well and the avalanche multiplication in the reverse-biased region, an S-shaped negative differential resistance (NDR) is obtained in the device characteristics. With a replacement of the ohmic-contact p-type cap layer with a Schottky-contact n-type layer in the pnpn TBOS, a Schottky-contact npn TBOS has also been proposed. A double S-shaped NDR phenomenon is observed in the npn TBOS characteristics due to the hole accumulation in the δ(p+) well and the sequential avalanche multiplications in the reverse-biased region and Schottky-contact junction. Both devices show a flexible optical function as a result of the triangular barrier heights associated with incident light.

Virial theorem and generalized momentum in quaternionic quantum mechanics

“…A general question about HQM involves its relation to non-hermitian CQM [35,36], a framework where parity and time-reversal invariances (PT −invariances) replace hermiticity. This approach rendered fruitful theoretical developments [44][45][46][47][48][49] and also experimental tests of the theory have been done [50][51][52][53]. Inquiring whether the quaternic and the complex formulations relate themselves is very relevant.…”

Non-anti-hermitian Quaternionic Quantum Mechanics

“…On the other hand, if non-anti-hermitian QQM is somewhat related to non-hermitian CQM, we may have an important way of testing QQM. We remember that non-hermitian CQM has deserved an remarkable interest from experimental physicists [7][8][9][10], and these techniques may test QQM as well. Furthermore, there exist different theoretical proposals about non-hermitian CQM [11][12][13][14][15][16] and even for non-anti-hermitan QQM [17,18].…”