1998
DOI: 10.1088/0268-1242/13/8/022
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Switches with double carrier confinement structures for multiple-valued logic applications

Abstract: Two switching devices with different double carrier confinement structures were fabricated. One is a GaAs switch with double InGaP barriers, another with double GaAs-InGaAs delta-doped (δ-doped) quantum wells. In the characteristics of the former, because of the two-step barrier lowering induced by the processes of the carrier charging to the injection junction and carrier confinement in wells, a double S-shaped negative differential resistance (NDR) phenomenon is observed after the onsets of successive avalan… Show more

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