High-resolution short range ion detectors based on 4H-SiC films

Иванов, А. М.; Kalinina, Evgenia V.; Konstantinov, A. O.; Onushkin, Grigory; Strokan, N. B.; Kholuyanov, G.; Hallén, Anders

doi:10.1134/1.1783406

Cited by 13 publications

(9 citation statements)

References 4 publications

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“…The best fit yielded L d = 56 μm, which is almost three times of that obtained in highest resolution SBDs [20], [29], [30]. The CCE obtained at V a = 0 V was found to be 82% which is also very high compared to the 57% obtained for the high-resolution SBDs fabricated in our laboratory and others [20], [31], [32]. Neutron detectors with converting thin film layers (which acts as the source) directly deposited on the detector itself has only demonstrated such high CCE at zero bias [33].…”

Section: Resultsmentioning

confidence: 47%

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Chaudhuri

Karadavut

Kleppinger

et al. 2022

IEEE Electron Device Lett.

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We report the fabrication of novel self-biased high resolution radiation detectors achieved in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices. Vertical MOS structure has been realized by pulsed laser deposition of 40 nm Y 2 O 3 layer on 20 μm n-type 4H-SiC epilayer followed by sputter coating a nickel gate, which revealed a record-high hole diffusion length. The MOS device exhibited a remarkable radiation detection response to 5486 keV alpha particles with a charge collection efficiency of 82% and an energy resolution of 72 keV full width at half maximum (FWHM) at zero applied bias. The hole diffusion length has been calculated to be 56 μm using a drift-diffusion model. Such long hole diffusion length and a flat-band potential of 2.1 V, enabled to attain high efficiency and resolution in the self-biased mode. Band energy calculations indicated that the presence of Y 2 O 3 layer may have neutralized the hole traps usually present in a metal-4H-SiC interface thereby substantially improving the hole transport. Such high performing self-biased radiation detectors fabricated on 4H-SiC are intended for applications in harsh environment space missions, wherein carrying detector power supplies as a payload becomes a critical logistic issue. The present study opens the high potential of other wide bandgap semiconductors as self-biased MOS devices as well. Index Terms-Epitaxial layers, pulsed laser deposition, MOS devices, radiation detectors, silicon carbide (4H-SiC), yttrium oxide (Y 2 O 3 ). I. INTRODUCTION4 H-SILICON CARBIDE has unique combination of physical properties such as excellent carrier transport properties, high breakdown voltage, high displacement threshold,

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Section: Resultsmentioning

confidence: 47%

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Chaudhuri

Karadavut

Kleppinger

et al. 2022

IEEE Electron Device Lett.

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“…An value of 8.6 eV for alpha particles in epitaxial n-type 4H-SiC were reported by Lebedev et al [32]. Ivanov et al [33] have reported = 7.71 eV for alpha particles in epitaxial n-type 4H-SiC. An value of 7.8 eV has been reported by Bertuccio and Casiraghi for 59.5 keV gamma rays [34].…”

Section: Electron-hole Pair Creation Energy Measurementsmentioning

confidence: 75%

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

2020

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Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses of the actual epitaxial layers were either 20 or 50 µm. The article reviews the investigation of defect levels in 4H-SiC epilayers and radiation detection properties of Schottky barrier devices (SBDs) fabricated in our laboratories at UofSC. Our studies led to the development of miniature SBDs with superior quality radiation detectors with highest reported energy resolution for alpha particles. The primary findings of this article shed light on defect identification in 4H-SiC epilayers and their correlation with the radiation detection properties.

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“…It is therefore suited for operation at higher temperatures and considered radiation hard. Development work on such detectors has been done since many years, and it has been shown that SiC detectors can be used as detectors for neutrons as well as charged particles, see [9]- [11] and others. Although their charge collection efficiency degrades with accumulated dose it can be partially recovered when annealing at temperatures above 400°C [12].…”

Section: B Instrumentation Currently Under Investigation At Kitmentioning

confidence: 99%

Instrumentation for Neutron Flux and Tritium Production Rate Monitoring in the European TBM in ITER

Klix

Angelone

Fischer

et al. 2014

IEEE Trans. Plasma Sci.

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Test blanket modules (TBMs) will be installed in the ITER with the aim to investigate the nuclear performance of different breeding blanket designs for fusion power reactors. Here, we present an overview of our ongoing work on three types of neutron flux monitors under development at Karlsruhe Institute of Technology (KIT) for the TBMs. A foil activation system with pneumatic sample transport was constructed by KIT utilizing the intense DT neutron generator of Technical University of Dresden. It is used as a test bench for the development of a neutron activation system for the TBMs. Self-powered neutron detectors (SPNDs) are widely applied in fission reactor monitoring, and the commercially available SPNDs are sensitive to thermal neutrons. We are investigating novel materials for SPND which would be sensitive also to the fast neutron flux expected in the TBMs. Within the I_SMART project, funded by KIC InnoEnergy, KIT is developing an online detector based on silicon carbide electronics for the TBMs. Index Terms-Helium-cooled lithium-lead (HCLL) test blanket module (TBM), helium-cooled pebble bed (HCPB) TBM, ITERTBM, neutronics instrumentation, TBM, tritium production rate.

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High-resolution short range ion detectors based on 4H-SiC films

Cited by 13 publications

References 4 publications

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Instrumentation for Neutron Flux and Tritium Production Rate Monitoring in the European TBM in ITER

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